Jiangsu Profile
Product List
22486. 40V/5.5mΩ /82A N-Mosfet Dsd065n04la to-252b 
[Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 82 A (T=100ºC) 58 A Single Pulse Avalanche ...
22487. 100V/5.9mΩ /100A N-Mosfet DSG070n10L3 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 71 A Single Pulse Avalanche ...
22488. 50A 30V N-Channel Enhancement Mode Power Mosfet Dhb50n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
22489. 90A 30V N-Channel Enhancement Mode Power Mosfet DHD90n03 to-252b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
22490. 90A 30V N-Channel Enhancement Mode Power Mosfet Dhb90n03 to-251b [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 V ID (T=25ºC) - 90 A BVGSS ±20 V VTH 2 4 V EAS - - 272 mJ Ptot - - 75 W Features Fast Switching Low ON Resistance Low ...
22491. High Efficiency SCR Thyristor Inverter for Phase Control [Apr 08, 2026]
[Apr 08, 2026] Product name Factory price high frequency power inverter thyristor r1275 Color Silver Usage HVDC transmission, reactive power compensation, air conditioning, switching switch, motor excitation, induction heating, ...
22492. 100V/5.6mΩ /103A N-Mosfet Dse065n10L3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 103 A (T=100ºC) 73 A Single Pulse Avalanche ...
22493. 30V/2.2mΩ /150A N-Mosfet DTG023n03L to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 150 A (T=100ºC) 95 A Drain ...
22494. 150V/7.5mΩ /115A N-Mosfet DSG092n15n3a to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
22495. 100V/12.5mΩ /60A N-Mosfet DSG150n10L3 to-220 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
22496. NPN Epitaxial Silicon Transistor Bu406 to-220c [Jun 23, 2025]
[Jun 23, 2025] Description BT151 series of silicon controlled rectifiers, with high ability to withstand the shock loading of large current, provide high dv/dt rate with strong resistance to electromagnetic interference. ...
22497. 4/6/8/12 Inch Silicon Wafer for Mosfet Chips [Jan 03, 2026]
[Jan 03, 2026] Basic Info Product Description Silicon Wafer Silicon Si uses: used as a semiconductor material high power transistor rectifier ...
Company: Wuxi Kingful Corporation., Ltd
22498. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 [Nov 08, 2025]
[Nov 08, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
22499. 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
22500. 85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c [Nov 08, 2025]
[Nov 08, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
