Jiangsu Profile
Product List
21991. Fds6679az Substitute Mosfet G16p03s Sop-8 Package P Channel -30V 
[Jun 14, 2022]
[Jun 14, 2022] FDS6679AZ Substitute Mosfet G16P03S SOP-8 Package P Channel -30V General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21992. 3401L -30V -4.2A P Channel Sot-23-3L Mosfet Transistor for Mobile Power Supply [Jun 14, 2022]
[Jun 14, 2022] 3401L -30V -4.4A P CHANNEL SOT-23-3L MOSFET Transistor for Mobile Power Supply General Description The 3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21993. ISO9001 Approved 30V 33A Dfn3X3 Mosfet for Mobile Charge [Jun 14, 2022]
[Jun 14, 2022] ISO9001 Approved 30V 33A DFN3X3 Mosfet for Mobile Charge General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21994. ISO9001 Certificate 30V 30A Dfn Package N Channel Mosfet for Pd [Jun 13, 2022]
[Jun 13, 2022] ISO9001 Certificate 30V 30A DFN Package N Channel Mosfet for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21995. Factory Directly Electronic Components 20V 8A N Mosfet [Jun 13, 2022]
[Jun 13, 2022] Factory Directly Electronic Components 20V 8A N MOSFET General Description The G6N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21996. Factory Directly 20V Dfn2*2-6L Package Mosfet as Alternative of Fdma410nz [Jun 10, 2022]
[Jun 10, 2022] Factory Directly 20V Dfn2*2-6L Package MOSFET as Alternative of Fdma410nz General Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21997. Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A [Jun 10, 2022]
[Jun 10, 2022] Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A General Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21998. Ao3442 Equivalent Transistor Mosfet 1002L 100V 2A Sot-23-3 [Jun 10, 2022]
[Jun 10, 2022] AO3442 Equivalent Transistor MOSFET 1002L 100V 2A SOT-23-3 General Description The 1002L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
21999. Active Components N-Channel Mosfet 60V Transistor G110n06 [Jun 10, 2022]
[Jun 10, 2022] Active Components N-Channel MOSFET 60V Transistor G110N06 General Description The G110N06uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22000. Mosfet Ao4455 Equivalent Transistor G16p03s P Mosfet -30V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Mosfet AO4455 Equivalent Transistor G16P03S P Mosfet -30V SOP-8 General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22001. Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter [Jun 10, 2022]
[Jun 10, 2022] SIRA52DP Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22002. Discrete Component Irf7413z Equivalent Transistor G16n03s N Channel 30V 16A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Discrete Component IRF7413Z Equivalent Transistor G16N03S N Channel 30V 16A Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22003. Mosfet Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes [Jun 10, 2022]
[Jun 10, 2022] MOSFET Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22004. Si4931dy Substitute G11s Mosfet Transistor P Channel 12V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Si4931DY Substitute G11S Mosfet Transistor P Channel 12V SOP-8 General Description The G11S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22005. LED Power Supply Application 60n04 40V 60A To252 N Mosfet [Jun 10, 2022]
[Jun 10, 2022] LED Power Supply Application 60N04 40V 60A TO252 N MOSFET General Description The 60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
