Jiangsu Profile
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Product List
1. 800V 7A N-Channel Enhancement Mode Power Mosfet F7n80 to-220f **%off 
[Jun 23, 2025]
[Jun 23, 2025] 
PARAMETER SYMBOL VALUE UNIT 7N80/I7N80/E7N80 F7N80 Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
2. Hot Sale Triac Bidirectional Thyristor 4A Bt136 **%off [Jun 25, 2025]
[Jun 25, 2025]
Description BT136E series triacs with low holding and latchingcurrent are especially recommended for use onmiddle and small resistance type power load. TO-220F provides insulation voltage rated at 2000V RMS ...
3. 200A, 800-1600V, Rectifier Module Mdq200A08 [Jul 11, 2025]
[Jul 11, 2025]
200A, 800-1600V--MDQ package rectifier module---MDQ200A08-MDQ200A16 Datasheet Product Pictures PRODUCT SERIES Type VRRM IRRM lo Tc lF(AV) lF(RMS) IFsM VFM VTo Rm(re) Rm(ch) ...
4. 35A, 400V Motor Pressfit Diode MP354 [Jul 11, 2025]
[Jul 11, 2025]
WE supply 25A, 35A, 200V,400V,600V, Motor Pressfit Diode MP354 welcome to order. Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics Picture VRWM IF IFSM ...
5. 110A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06e [Jun 23, 2025]
[Jun 23, 2025]
PARAMETER SYMBOL VALUE UNIT DH066N06/DH066N06D Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 110 A (T=100ºC) 78 A Drain ...
6. 50A, 600V Bosch Press Fit Diode 506 [Jul 11, 2025]
[Jul 11, 2025]
WE supply 35A, 50A,200V,400V,600V, BOSCH PRESS FIT DIODE 506 welcome to order. Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics Picture VRWM IF IFSM ...
7. 30A 200V Schottky Barrier Diode Mbr30100CT to-220 & Mbr30100nct to-3pn [Jun 23, 2025]
[Jun 23, 2025]
Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
8. Mtc300-16 300A 1600V SCR Water Cooling Semiconductor Diode Thyristor Control Bridge Rectifier 1600V ... [Jun 18, 2025]
[Jun 18, 2025] Product Description Thyristor Module High Power Handling Capacity: This semiconductor module is designed for high-power applications, with a peak repetitive reverse voltage of 1600V and a mean on-state current of ...
9. 21A 650V N-Channel Super Junction Power Mosfet Dhsj21n65W to-247 [Jun 23, 2025]
[Jun 23, 2025]
Features Fast switching Low on resistance(Rdson≤0.165Ω) Low gate charge(Typ: 50nC) Low reverse transfer capacitances(Typ: 3.5pF) 100% Single Pulse Avalanche Energy Test 100% ΔVDS ...
10. 25A, 400V, Button Diode Ars254 [Jul 11, 2025]
[Jul 11, 2025]
we supply 25A, 35A, 50A, 50-1000V button diode. 35A 600V AUTOMOTIVE BUTTON DIODE-ARS356 Datasheet Products list AUTOMOTIVE DIODE Series Part No Max Rating and Electrical Characteristics VRWM IF IFSM ...
11. Insulated Gate Bipolar Transistor IGBT G40n120d to-247 [Jun 23, 2025]
[Jun 23, 2025]
PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 1200 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...
12. 35A, 50-1000V, Diode Bridge Silicon, Kbpc3510 [Jul 11, 2025]
[Jul 11, 2025]
35A,50-1000V--Diode bridge silicon--KBPC35005 ------- KBPC3510 Datasheet Products list TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
13. AC Thyristor Three-Phase Triple 300kw High-Efficiency Pid Intelligent Voltage SCR Power Regulator ... [Jun 18, 2025]
[Jun 18, 2025] Product Description High Voltage Capacity: Our 380V Three Phase Voltage Thyristor SCR Power Regulator Stabilizers are designed to handle high voltage applications, making them ideal for use in industries that require ...
14. Electronic Components Original Stock Semiconductor 1600V Bridge Rectifier Water Cooling Diode SCR ... [Jun 24, 2025]
[Jun 24, 2025] Product Description Thyristor Module High Power Handling Capacity: Discover our revolutionary N and P-Channel SCR Thyristor Control Power Module, purpose-built for the most rigorous high-power demands. With a ...
15. 1200V IGBT Module Dgc40c120m2t [Jun 25, 2025]
[Jun 25, 2025]
40A 1200V PIM in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which ...
