Jiangsu Profile
Product List
23176. Discrete Component Si4916dy Equivalent Transistor G16n03s 30V Mosfet 
[Jun 14, 2022]
[Jun 14, 2022] Discrete Component Si4916DY Equivalent Transistor G16N03S 30V Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23177. Goford G3401A Mosfet 30V 4.4A Sot-23 P Channel Mosfet for Mobile Charger [Aug 19, 2022]
[Aug 19, 2022] GOFORD G3401A MOSFET 30V 4.4A SOT-23 P Channel MOSFET for Mobile Charger General Description The G3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23178. New Original Mosfet Transistor SMD Package 45p40 40V 50A P Channel with to-252 Package [Aug 19, 2022]
[Aug 19, 2022] New Original MOSFET Transistor SMD Package 45P40 40V50A P Channel with TO-252 Package General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23179. Original New Mosfet Supplier 60V 20A Dfn Mosfet with RoHS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original New MOSFET Supplier 60V 20A DFN MOSFET with ROHS Certificate General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23180. Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package [Aug 19, 2022]
[Aug 19, 2022] Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23181. N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application [Aug 19, 2022]
[Aug 19, 2022] N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23182. Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter [Aug 19, 2022]
[Aug 19, 2022] AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23183. Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original factory directly N Channel 60V 6A sot-23-3l Package mosfet with SGS Certificate General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23184. 13007D 4-Inch High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 330μ m×330μ m BVCEO 410V BVCBO 700V BVEBO 9V hFE 15-30 VCE(sat) 0.6V fT 5MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23185. 9015SSS 5-Inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 260μ m×260μ m BVCEO -50V BVCBO -70V BVEBO -8V hFE 60-600 VCE(sat) -0.3V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23186. 9014s 5inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 300μ m×300μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23187. 9014ss 5inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 280μ m×280μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23188. 9014m 5inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 330μ m×330μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23189. 8015 5inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 400μ m×400μ m BVCEO -20V BVCBO -35V BVEBO -6V hFE 100-400 VCE(sat) -0.3V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23190. 9012s 5-Inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 400μ m×400μ m BVCEO -30V BVCBO -50V BVEBO -8V hFE 85-400 VCE(sat) -0.6V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
