Jiangsu Profile
Famous Export Brand
Featured Products
Product List
31336. 20N03D 20A 30V N-channel enhancement mode power MOSFET 
[Dec 27, 2025]
[Dec 27, 2025] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer exclusively focused on diodes, bridge rectifiers, automotive rectifier diodes, thyristors, and MOSFETs. We could supply competitive price and fast ...
31337. 80N03D 80A 30V N-channel enhancement mode power MOSFET [Dec 27, 2025]
[Dec 27, 2025] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer exclusively focused on diodes, bridge rectifiers, automotive rectifier diodes, thyristors, and MOSFETs. We could supply competitive price and fast ...
31338. 100N03D 100A 30V N-channel enhancement mode power MOSFET [Dec 27, 2025]
[Dec 27, 2025] FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer exclusively focused on diodes, bridge rectifiers, automotive rectifier diodes, thyristors, and MOSFETs. We could supply competitive price and fast ...
31339. G7p03L -30V -7A Sot-23-L Packaging P-Channel Mosfet for Fast Charge Application [Aug 19, 2022]
[Aug 19, 2022] Product Description G7P03L -30V -7A SOT-23-3L packaging Mosfet (electronic components distributor) Part Number G7P03L VDSS -30V ID -7A RDS 23mΩ @vgs=4.5V 19mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
31340. G07p03L -30V -7A Sot-23-L Packaging P-Channel Mosfet for Fast Charge Application [Aug 19, 2022]
[Aug 19, 2022] Product Description G07P03L -30V -7A SOT-23-3L packaging Mosfet (electronic components distributor) Part Number G07P03L VDSS -30V ID -7A RDS 26-34mΩ @vgs=4.5V 20.5-23mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
31341. Mosfets Crosses 60V 53A [Aug 19, 2022]
[Aug 19, 2022] Product Description GT55N06 60V 53A DFN5*6 packaging Mosfet (electronic components distributor) Part Number GT55N06 VDSS 60V ID 53A RDS 6.8-8.2mΩ @vgs=10V Vth 1.7V Package DFN5*6 Ciss 1955 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
31342. Mosfet 100V 2A Sot-23 [Aug 19, 2022]
[Aug 19, 2022] Product Description 1002 100V 2A SOT-23 packaging Mosfet (electronic components distributor) Part Number 1002 VDSS 100V ID 2A RDS 180mΩ @vgs=10V Vth 2.0V Package SOT-23 Ciss 190 pF Crss 13 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
31343. Gc20n65t 650V 20A Mosfets [Feb 03, 2023]
[Feb 03, 2023] Product Description GC20N65T 650V 20A For more products details, please contact us ! Packaging & Shipping 1. The order normally will be shipped within 3to7 working days upon the availability of the ...
Company: Wuxi Goford Semiconductor Co., Ltd.
31344. Electrical Component 5n20A Mosfet 200V 5A to-252 Packaging [Aug 19, 2022]
[Aug 19, 2022] Product Description 5N20A 200V 5A TO-252 packaging Mosfet (electronic components distributor) Part Number 5N20A VDSS 200V ID 5A RDS 0.49-0.58Ω @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
31345. 6 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31346. 8 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31347. 2 Inch Silicon Carbide Wafer (SiC Wafer) 4h-N-Type for Photovoltaic Radio Frequency Single Crystal ... [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31348. 4 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
31349. 4 Inch GaN on Silicon Epitaxial Wafer [Nov 05, 2024]
[Nov 05, 2024] GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
31350. 2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
