Jiangsu Profile
Product List
40411. 1.5ke6.8-1.5ke440A Series Do-201ad Transient Voltage Suppressors Diode 
[Jul 12, 2021]
[Jul 12, 2021] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
40412. Ss12-Ss120 Surface Mount Schottky Barrier Rectifiers [Dec 31, 2020]
[Dec 31, 2020] PRODUCT INFORMATION ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price ...
40413. General Purpose Rectifiers Diode 1A1-1A7 [Jun 06, 2019]
[Jun 06, 2019] Product Description Symbols 1A1 1A2 1A3 1A4 1A5 1A6 1A7 Units Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 800 1000 Volts Maximum RMS ...
40414. 16A 600V SMD Super Fast Rectifier Diode Mur1660 to-277 [Dec 24, 2025]
[Dec 24, 2025] FEATURES Low cost. Low Leakage. Low Forward Voltage Drop. High Current Capability. Easily cleaned with Alcohol,Isopropanol and Similar solvents. The plastic material carries U/L ...
40415. New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65 [Dec 24, 2025]
[Dec 24, 2025] Parameter Symbol Value Unit - Drain-Source Voltage VDSS 650 V Continues Drain Current ID Tc=25ºC 7* A Tc=100ºC 4.0* ( 1) Plused Drain Current (note 1) IDM 25 A Gate-to-Source ...
40416. 680V/12A 0.8mΩ Zg12n65 N-Channel Advanced Power Mosfet [Dec 24, 2025]
[Dec 24, 2025] ZG12N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve ...
40417. 16A 200V SMD Super Fast Rectifier Diode Mur1620 to-277 [Dec 24, 2025]
[Dec 24, 2025] FEATURES Low cost. Low Leakage. Low Forward Voltage Drop. High Current Capability. Easily cleaned with Alcohol,Isopropanol and Similar solvents. The plastic material carries U/L ...
40418. High Efficiency Rectifier Diode 1A 400V Zg Brand UF4007 [Jan 11, 2025]
[Jan 11, 2025] Symbols UF 4001 UF 4002 UF 4003 UF 4004 UF 4005 UF 4006 UF 4007 Units Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 800 1000 Volts Maximum RMS ...
40419. 1n5817 Schottky Barrier Rectifier Sb120 100CT/Fct/DC to-220f [Jan 11, 2025]
[Jan 11, 2025] The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast ...
40420. UF800 Ultrafast Switching Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound Exceeds environmental standards of M1L-S-19500/228 Low power loss, high ...
40421. UF800-UF808 Ultrafast Switching Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound Exceeds environmental standards of M1L-S-19500/228 Low power loss, high ...
40422. Goford Mosfet G45p02D3 19V 45A Dfn3X3 P Channel Mosfet for Pd Application [Nov 14, 2023]
[Nov 14, 2023] GOFORD MOSFET G45P02D3 19V 45A DFN3X3 P Channel MOSFET for PD Application General Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
40423. P-CH Trench Mosfet Field Effect Transistor in a Dfn3*3-8L Package for Power Switch [Aug 19, 2022]
[Aug 19, 2022] P-CH Trench Mosfet Field Effect Transistor in a DFN3*3-8L Package for power switch Part Number G16P03D3 VDSS -30V ID -16A RDS 11.5mΩ @ vgs=4.5V Vth -1.5V Package DFN3*3 Ciss 1995 pF Crss 260 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
40424. G180n03D5 30V 170A Aons66612t Substitute Mosfet with Dfn Package [Jun 14, 2022]
[Jun 14, 2022] G180N03D5 30V 170A AONS66612T Substitute MOSFET with DFN Package General Description The G180N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
40425. Factory Directly Transistor 30V 8A Dfn Package Mosfet for Electronic Cigarette [Jun 14, 2022]
[Jun 14, 2022] Factory Directly Transistor 30V 8A DFN Package MOSFET for Electronic Cigarette General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
