Jiangsu Profile
Product List
44251. Discrete Component G16p03s P Channel 30V 16A Mosfet for Pd 
[May 21, 2022]
[May 21, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for PD General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44252. G01n20L Mosfet 200V 2A Sot-23-3L Package Transistor China Manufacturer [May 21, 2022]
[May 21, 2022] G01N20L MOSFET 200V 2A SOT-23-3L Package Transistor China Manufacturer General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44253. ISO9001 Certificate Mosfet Transistor of 60V Dfn Package [May 21, 2022]
[May 21, 2022] ISO9001 Certificate MOSFET Transistor of 60V DFN Package General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44254. Free Sample G48n03D3 30V 48A Dfn Package Mosfet for Mobile Charge [May 21, 2022]
[May 21, 2022] Free Sample G48N03D3 30V 48A Dfn Package Mosfet for Mobile Charge General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44255. Equivalent Transistor Fqd10n20L Substitute Mosfet of 200V 9A Dpak [May 21, 2022]
[May 21, 2022] Equivalent Transistor FQD10N20L Substitute MOSFET of 200V 9A DPAK General Description The 630A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44256. Mosfet G20n06j 60V to-251 Package Mosfet with ISO9001 Certificate [Mar 18, 2022]
[Mar 18, 2022] MOSFET G20N06J 60V TO-251 Package MOSFET with ISO9001 Certificate General Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44257. Original New Aod484 Mosfet Transistor with 30V 50A to-252 Package [Mar 18, 2022]
[Mar 18, 2022] Original New Aod484 Mosfet Transistor with 30V 50A to-252 Package General Description The 50N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44258. Transistor IC Chips 30V 30A Dfn N Channel Electronic Components for Laptop [Mar 18, 2022]
[Mar 18, 2022] Transistor IC Chips 30V 30A Dfn N Channel Electronic Components for Laptop General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44259. Mosfet Manufacturer G30n03D3 30V 30A Dfn3X3 Mosfet for Pd [Mar 18, 2022]
[Mar 18, 2022] MOSFET Manufacturer G30N03D3 30V 30A DFN3X3 MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44260. Electric Components G30n03A 30V 30A Dfn3*3-8L Mosfet Transistor for SMPS [Mar 18, 2022]
[Mar 18, 2022] Electric Components G30N03A 30V 30A DFN3*3-8L MOSFET Transistor for SMPS General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44261. Discrete Component Sira52dp Alternative 60V 53A Mosfet [Mar 18, 2022]
[Mar 18, 2022] Discrete Component SIRA52DP Alternative 60V 53A Mosfet General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44262. Mosfet Manufacturer G48n03D3 30V 48A Dfn Package IC Transistor for Fast Charger [Oct 08, 2021]
[Oct 08, 2021] Mosfet Manufacturer G48N03D3 30V 48A DFN Package IC Transistor for Fast Charger General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44263. Dmg3402L-7 Equivalent Transistor Mosfet G3404 of 30V 5.8A Sot-23 [Nov 14, 2023]
[Nov 14, 2023] DMG3402L-7 Equivalent Transistor MOSFET G3404 of 30V 5.8A SOT-23 General Description The G3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44264. N Channel Mosfet G30n03D3 30V 30A Dfn Package Transistor for Fast Charge [Nov 14, 2023]
[Nov 14, 2023] N Channel MOSFET G30N03D3 30V 30A DFN Package Transistor for Fast Charge General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44265. Fdmc4435bz Replacement Mosfet -30V P Channel Dfn Package for Mobile Fast Charge [Nov 13, 2023]
[Nov 13, 2023] FDMC4435BZ Replacement MOSFET -30V P Channel DFN Package for Mobile Fast Charge General Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
