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50596. New Original to-220f 7A 680V N-Channel Mosfet Transistor 7n65 
[Dec 24, 2025]
[Dec 24, 2025] Parameter Symbol Value Unit - Drain-Source Voltage VDSS 650 V Continues Drain Current ID Tc=25ºC 7* A Tc=100ºC 4.0* ( 1) Plused Drain Current (note 1) IDM 25 A Gate-to-Source ...
50597. 680V/12A 0.8mΩ Zg12n65 N-Channel Advanced Power Mosfet [Dec 24, 2025]
[Dec 24, 2025] ZG12N65 is an N-channel enhancement mode MOSFET, which is produced using Zhongxin Micro-electronics's proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve ...
50598. 16A 200V SMD Super Fast Rectifier Diode Mur1620 to-277 [Dec 24, 2025]
[Dec 24, 2025] FEATURES Low cost. Low Leakage. Low Forward Voltage Drop. High Current Capability. Easily cleaned with Alcohol,Isopropanol and Similar solvents. The plastic material carries U/L ...
50599. High Efficiency Rectifier Diode 1A 400V Zg Brand UF4007 [Jan 11, 2025]
[Jan 11, 2025] Symbols UF 4001 UF 4002 UF 4003 UF 4004 UF 4005 UF 4006 UF 4007 Units Maximum repetitive peak reverse voltage VRMM 50 100 200 400 600 800 1000 Volts Maximum RMS ...
50600. 1n5817 Schottky Barrier Rectifier Sb120 100CT/Fct/DC to-220f [Jan 11, 2025]
[Jan 11, 2025] The company has a wide variety of products with complete specifications, including transient voltage suppressors(TVS), tss, general rectifier(STD), fast recovery diode(FR), high efficiency rectifiers(HER\UF), super fast ...
50601. UF800 Ultrafast Switching Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound Exceeds environmental standards of M1L-S-19500/228 Low power loss, high ...
50602. UF800-UF808 Ultrafast Switching Rectifier Diode [Jan 11, 2025]
[Jan 11, 2025] FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound Exceeds environmental standards of M1L-S-19500/228 Low power loss, high ...
50603. Goford Mosfet G45p02D3 19V 45A Dfn3X3 P Channel Mosfet for Pd Application [Nov 14, 2023]
[Nov 14, 2023] GOFORD MOSFET G45P02D3 19V 45A DFN3X3 P Channel MOSFET for PD Application General Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
50604. P-CH Trench Mosfet Field Effect Transistor in a Dfn3*3-8L Package for Power Switch [Aug 19, 2022]
[Aug 19, 2022] P-CH Trench Mosfet Field Effect Transistor in a DFN3*3-8L Package for power switch Part Number G16P03D3 VDSS -30V ID -16A RDS 11.5mΩ @ vgs=4.5V Vth -1.5V Package DFN3*3 Ciss 1995 pF Crss 260 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
50605. G180n03D5 30V 170A Aons66612t Substitute Mosfet with Dfn Package [Jun 14, 2022]
[Jun 14, 2022] G180N03D5 30V 170A AONS66612T Substitute MOSFET with DFN Package General Description The G180N03D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
50606. Factory Directly Transistor 30V 8A Dfn Package Mosfet for Electronic Cigarette [Jun 14, 2022]
[Jun 14, 2022] Factory Directly Transistor 30V 8A DFN Package MOSFET for Electronic Cigarette General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
50607. Dmp2008ufg-7 Alternative Mosfet 19V 45A Dfn3X3 P Channel Mosfet Transistor [Jun 14, 2022]
[Jun 14, 2022] Dmp2008ufg-7 Alternative Mosfet 19V 45A Dfn3X3 P Channel Mosfet Transistor General Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
50608. Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Mosfet for Mobile Fast Charger [Jun 10, 2022]
[Jun 10, 2022] AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor for Mobile Fast Charger General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
50609. SGS Certificate Mosfet 30V 8A of Dfn2X2 Package [Jun 10, 2022]
[Jun 10, 2022] SGS Certificate MOSFET 30V 8A of DFN2X2 Package General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
50610. Electronic Components Gt045n10d5 Mosfet 100V 80A Dfn Package Transistor for Solar Inverter [Jun 10, 2022]
[Jun 10, 2022] Electronic Components GT045N10D5 MOSFET 100V 80A DFN Package Transistor for Solar Inverter General Description The GT045N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can ...
Company: Wuxi Goford Semiconductor Co., Ltd.
