Jiangsu Profile
Product List
10831. DSP 2 Inch GaN Wafer Supplier Sapphire Substrate GaN Epi 
[May 20, 2025]
[May 20, 2025] DSP 2 inch GaN wafer Supplier Sapphire Substrate GaN Epi Choose double side polished 2 inch GaN substrate from HMT GaN wafer manufacturer and supplier. We supply both 2 inch and 4 inch Sapphire substrate GaN wafer. ...
Company: Homray Material Technology
10832. 6 Inch Sic Wafer Without Polishing Manufacturer 600um Thickness [May 20, 2025]
[May 20, 2025] 6 inch SiC Wafer without polishing Manufacturer 600um thickness As the leading manufacturer of SiC Substrate, HMT company also offer high quanlity Raw-cut SiC Wafer both for 6 inch and 4 inch. Our Un-grinding SiC ...
Company: Homray Material Technology
10833. GaN-on-Sic Epitaxial Structures Wafer Manufacturer with 4 or 6 Inch Diameter [May 20, 2025]
[May 20, 2025] GaN-on-SiC epitaxial structures wafer manufacturer with 4 or 6 inch diameter GaN-on-SiC Epi wafer supplier and manufacturer HMT offer 4 inch and 6 inch AlGaN/GaN-on-SiC epi wafer with competitive price at the market. ...
Company: Homray Material Technology
10834. 8 Inch GaN Epi Wafer Manufacturer for LV Breakdown Voltage<200V [May 20, 2025]
[May 20, 2025] 8 inch GaN Epi Wafer Manufacturer for LV Breakdown voltage<200V As the GaN Epi Wafer manufacturer and supplier, HMT can provide GaN on Si Epi Wafer with breakdown voltage <200V, epi thickness <2.2um. Meanwhile, we ...
Company: Homray Material Technology
10835. GaN Epi Grown on Sapphire Wafer Manufacture and Supplier [May 20, 2025]
[May 20, 2025] GaN Epi grown on Sapphire wafer manufactuer and supplier Homray Material Technology produces and supplies GaN-on-Sapphire epi wafer with 4 inch and 6 inch for power device.The products have extremely high electron ...
Company: Homray Material Technology
10836. 2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
10837. Hall-Effect Linar Integrated Circuits (OH49E) [Aug 20, 2024]
[Aug 20, 2024] OH49E Series LINEAR HALL-EFFECT IC Order information Type OH49E-S Operating Temperature -20~100 degree Package SOT23 3000PCS/reel Type OH49E -20~100degree Package TO-92S 1000PCS/bag General Description The ...
Company: Nanjing Ouzhuo Technology Co., Ltd.
10838. Pgan E-Hemt on Si Manufacturer 4 Inch 100mm GaN-on-Si Supplier [May 20, 2025]
[May 20, 2025] pGaN E-HEMT on Si Manufacturer 4 inch 100mm GaN-on-Si Supplier Homray Material Technology Supply 100mm,150mm and 200mm diameter GaN-on-Si epi wafer with E-HMET and D-HEMT AlGaN/GaN hetero-epitaxial layer structure ...
Company: Homray Material Technology
10839. 4 Inch GaN Substrate Wafer Manufacturer N Type Si Doped [May 20, 2025]
[May 20, 2025] 4 inch GaN Substrate Wafer Manufacturer single side polished As the leading GaN wafer manufacturer in China,HMT company offer 4 inch sapphire substrate GaN wafers both for un-doped N type and SI type. GaN layer ...
Company: Homray Material Technology
10840. 6 Inch Sic Boule Manufacturer 4h-N Sic Ingot Supplier [May 20, 2025]
[May 20, 2025] 6 inch SiC Boule Manufacturer 4H-N SiC Ingot Supplier HMT offer guaranteed 6 inch SiC Boule for cold split and multi-wire saw machine testing. The mainstream is 6 inch SiC Boule in the market. We both supply conductive ...
Company: Homray Material Technology
10841. 2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
10842. 4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
10843. 2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped [Nov 05, 2024]
[Nov 05, 2024] GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
10844. as-Cut Sic Wafer Manufacturer 4 Inch 6 Inch Raw Cut Sic Substrate [May 20, 2025]
[May 20, 2025] As-cut SiC wafer Manufacturer 4 inch 6 inch Raw cut SIC Purchasing SiC testing Wafer For your SiC lapping and polishing equipment ? Come and have a look at HMT As-cut SiC wafer for machine testing only. Both 4 inch ...
Company: Homray Material Technology
10845. Sic Wafer Manufactures Produce 8 Inch D Grade Sic Substrate [May 20, 2025]
[May 20, 2025] SiC Wafer Manufactures Produce 8 inch D grade SiC Substrate Find high qulity of conductive N type single crystal SiC Wafer manufacurer and supplier from China, HMT company as the leading SiC Wafer manufacturer supply ...
Company: Homray Material Technology
