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45A 300V Fast Recovery Diode MUR4530DCT TO-3PN
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18781.

45A 300V Fast Recovery Diode MUR4530DCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN30F65M2 TO-3PN
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18782.

30A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN30F65M2 TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

15A 1200V SiC Schottky Barrier Diode DCGT15D120G4 TO-220
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18783.

15A 1200V SiC Schottky Barrier Diode DCGT15D120G4 TO-220 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN40F65M2 TO-3PN
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18784.

40A 650V TrenchStop Insulated Gate Bipolar Transistor IGBT DGN40F65M2 TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 80 A Collector Current (Tc=100ºC) 40 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 400V Fast Recovery Diode MUR80FU40NCT TO-3PN
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18785.

80A 400V Fast Recovery Diode MUR80FU40NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 150V Schottky Barrier Diode MBRF10150CT TO-220F
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18786.

10A 150V Schottky Barrier Diode MBRF10150CT TO-220F Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 650V SiC Schottky Barrier Diode DCE20D65G4 TO-263
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18787.

20A 650V SiC Schottky Barrier Diode DCE20D65G4 TO-263 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 600V Fast Recovery Diode MURF1060 TO-220F
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18788.

10A 600V Fast Recovery Diode MURF1060 TO-220F Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 300V Fast Recovery Diode MUR60G30NCT TO-3PN
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18789.

60A 300V Fast Recovery Diode MUR60G30NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low forward voltage drop Glass Passivated Die Construction Low leakage current High reliability High forward surge current capability Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 1200V Fast Recovery Diode MUR40120 TO-220
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18790.

40A 1200V Fast Recovery Diode MUR40120 TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

150A 150V N-Channel Enhancement Mode Power MOSFET DHS042N15E TO-263
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18791.

150A 150V N-Channel Enhancement Mode Power MOSFET DHS042N15E TO-263 Open Details in New Window [Aug 09, 2026]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 600V Fast Recovery Diode MUR2060A TO-220
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18792.

20A 600V Fast Recovery Diode MUR2060A TO-220 Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 45V Schottky Barrier Diode MBR6045NCT TO-3PN
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18793.

60A 45V Schottky Barrier Diode MBR6045NCT TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 45 V RMS Reverse Voltage VR(RMS) 45 V DC Blocking Voltage VR 45 V Average Rectified Forward Current IF(AV) 60 A Repetitive ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 60V Schottky Barrier Diode MBR6060NCT TO-3PN
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18794.

60A 60V Schottky Barrier Diode MBR6060NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Fast Recovery Diode MUR6020NCT TO-3PN
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18795.

60A 200V Fast Recovery Diode MUR6020NCT TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd