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20A 400V Fast Recovery Diode Mur2040 to-220-2L
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7906.

20A 400V Fast Recovery Diode Mur2040 to-220-2L Open Details in New Window [Jun 23, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

650 V 8A Sic Schottky Barrier Diode SDS065j008s3
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7907.

650 V 8A Sic Schottky Barrier Diode SDS065j008s3 Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2L
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7908.

1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2L Open Details in New Window [Jun 23, 2025]

8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

10A 45V Schottky Barrier Diode Mbr1045CT to-220m
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7909.

10A 45V Schottky Barrier Diode Mbr1045CT to-220m Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Mbr4060CT to-3p 40A 60V Schottky Barrier Diode
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7910.

Mbr4060CT to-3p 40A 60V Schottky Barrier Diode Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw
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7911.

50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 45V Schottky Barrier Diode Mbr4045CT to-263
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7912.

40A 45V Schottky Barrier Diode Mbr4045CT to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220
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7913.

20A 100V Low Schottky Barrier Diode Mbr20r100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.64 max 0.73 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

16A 100V Schottky Barrier Diode Mbr16100CT to-220
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7914.

16A 100V Schottky Barrier Diode Mbr16100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.79 max 0.85 IF(A) Single chip package 8 IF(A) Dual chip package 16 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 150V Schottky Barrier Diode Mbr40150CT to-263
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7915.

40A 150V Schottky Barrier Diode Mbr40150CT to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220
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7916.

20A 150V Low Schottky Barrier Diode Mbr20r150CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.77 max 0.80 IF(A) Single chip package 10.0 IF(A) Dual chip package 20.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 45V Schottky Barrier Diode Mbr3045CT to-263
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7917.

30A 45V Schottky Barrier Diode Mbr3045CT to-263 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247
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7918.

75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220
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7919.

30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220 Open Details in New Window [Jun 23, 2025]

SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

21.6% 36PCS Flagsun Module Products Flexible Panels Wholesale Solar Panel Price Manufacture
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7920.

21.6% 36PCS Flagsun Module Products Flexible Panels Wholesale Solar Panel Price Manufacture Open Details in New Window [Jun 21, 2025]

Product Description Model No : FFXS-150W Solar panel size : 1050*670*2.5mm Product net weight : 2.74 KG Solar cell: Sunpower solar cell Efficiency: 21.50% Maximum power(Pm): 150W Voltage at max ...

Company: Flagsun (Suzhou) New Energy Co., Ltd.