Jiangsu Profile
Product List
7966. Bifacial Solar Panels From Jinko OEM Manufacturer Tier 1 Quality 560W 550W 520W 530W 
[Jun 30, 2025]
[Jun 30, 2025] GKA182N132 530W-550W MONO SOLAR PANEL N TYPE TOPCON SOLAR CELL Product Description SPECIFICATION STC NOCT STC NOCT STC NOCT STC NOCT STC NOCT Maximum Power(Pma) 530W 399W 535W ...
Company: Nantong Gamko New Energy Co., Ltd.
7967. High Efficiency Mono 4W 5W 156mm Solar Cell Raw Material for Solar Panel [Jun 29, 2025]
[Jun 29, 2025] Product Description Product FLAGSUN 5BB 156*156mm Polycrystalline Silicon Solar Cell Model Number FSC-PP-025 Material Polycrystalline Silicon Size 156*156mm Number of Cells 1pcs Efficiency 17%~20% Max. ...
7968. 30A 150V Schottky Barrier Diode Mbr30150CT to-220 [Jun 25, 2025]
[Jun 25, 2025] SYMBOL RATING VBR (V) Min 150 typ 173 IR(uA)25ºC max 20 VF (V) 25ºC typ. 0.83 max 0.90 IF(A) Single chip package 15 IF(A) Dual chip package 30 Features High junction temperature ...
7969. 10A 150V Low Schottky Barrier Diode Mbr10r150CT to-252 [Jun 25, 2025]
[Jun 25, 2025] SYMBOL RATING VBR (V) Min 150 typ 175 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.78 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
7970. 10A 100V Schottkybarrierdiode Mbr10100CT to-220m [Jun 25, 2025]
[Jun 25, 2025] PARAMETER SYMBOL VALUE UNIT Peak Repetitive Reverse Voltage VRRM 100 V RMS Reverse Voltage VR(RMS) 80 V DC Blocking Voltage VR 100 V Average Rectified Forward Current IF(AV) 5 A Repetitive ...
7971. 550W Single Double Glass 110 Cells Sanders Solar Panel Photovoltaic Module [Jun 24, 2025]
[Jun 24, 2025] Product Description STC Electrical performance parameter Model number JD530M6C JD535M6C JD540M6C JD545M6C JD550M6C Power ...
Company: Yangzhou Bessent Trading Co., Ltd.
7972. 10A 60V Schottky Barrier Diode Mbr1060CT to-220 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 5.0 IF(A) Dual chip package 10.0 Features High junction temperature ...
7973. 50A 650V Trenchstop Insulated Gate Bipolar Transistor Dhg50t65dlbbw [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current (TJ=100ºC) 50 A Pulsed Collector Current ICM 150 A Diode ...
7974. 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220 [Jun 23, 2025]
[Jun 23, 2025] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
7975. 20A 400V Fast Recovery Diode Mur2040 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
7976. 650 V 8A Sic Schottky Barrier Diode SDS065j008s3 [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
7977. 1200V 5A Sic Schottky Barrier Diode Dcgt05D120g3 to-220-2L [Jun 23, 2025]
[Jun 23, 2025] 8A 650V SIC SchottkyBarrierDiode 1 Description SIC Series products family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...
7978. 10A 45V Schottky Barrier Diode Mbr1045CT to-220m [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 45 typ 52 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.56 max 0.65 IF(A) Single chip package 5 IF(A) Dual chip package 10 Features High junction temperature ...
7979. Mbr4060CT to-3p 40A 60V Schottky Barrier Diode [Jun 23, 2025]
[Jun 23, 2025] SYMBOL RATING VBR (V) Min 60 typ 72 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.71 max 0.80 IF(A) Single chip package 20 IF(A) Dual chip package 40 Features High junction temperature ...
7980. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
