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1906. Electronic Components G2014 20V 14A SMD Mosfet for Electronic Cigarettes 
[Jun 14, 2022]
[Jun 14, 2022] Electronic Components G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1907. ISO9001 Approved G48n03D3 30V 48A Dfn Package Mosfet for Mobile Charge [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Approved G48N03D3 30V 48A Dfn Package Mosfet for Mobile Charge General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1908. 2301h -30V -2A Sot-23 Nx3008pbk Replacement Transistor Mosfet [Jun 10, 2022]
[Jun 10, 2022] Product Description 2301H -30V -2A Sot-23 NX3008PBK replacement transistor Mosfet Part Number 2301H VDSS -30V ID -2A RDS 105mΩ @ vgs=4.5V Vth -1.6V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1909. Electric Components Medium Power Field Effect Mosfet G65p06t to-220 [Jun 02, 2022]
[Jun 02, 2022] Product Description Electric Components Medium Power Field Effect Mosfet G65P06T TO-220 Part Number G65P06T VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-220 Ciss 5814 pF Crss 234 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1910. IC Dual N Channel G20n06D52 60V 20A Dfn5*6 Package Mosfet [May 27, 2022]
[May 27, 2022] Product Description IC Dual N channel G20N06D52 60V 20A DFN5*6 package mosfet Part Number G20N06D52 VDSS 60V ID 20A RDS 24mΩ @ vgs=10V Vth 1.7V Package DFN5*6 Ciss 1220 pF Crss 92 pF Datasheet ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1911. 2302 (NTK3134NT1G) 20V 2.9A N-CH Sot-23 Original Import Transistor Mosfet [May 27, 2022]
[May 27, 2022] Product Description 2302 (NTK3134NT1G) 20V 2.9A N-CH Sot-23 Original Import Transistor Mosfet Part Number 2302 VDSS 20V ID 4.3A RDS 20mΩ @ vgs=4.5V Vth 0.83V Package SOT-23 Ciss 300 pF Crss 80 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1912. Aod4189 Equivalent Transistor 45p40 -40V -50A to-252 Mosfet [May 27, 2022]
[May 27, 2022] AOD4189 Equivalent Transistor 45P40 -40V -50A TO-252 Mosfet General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1913. Fdmc4435bz Alternative Mosfet -30V P Channel Mosfet for Pd [May 27, 2022]
[May 27, 2022] FDMC4435BZ Alternative MOSFET -30V P Channel MOSFET for PD General Description The G16P03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1914. SGS Certificate 60V 14A Sop-8 N Channel Mosfet [May 24, 2022]
[May 24, 2022] SGS Certificate 60V 14A Sop-8 N Channel Mosfet General Description The GT110N06S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1915. Irf100b202 Alternative N Channel 100V 75A to-220 Package Mosfet [May 24, 2022]
[May 24, 2022] IRF100B202 Alternative N Channel 100V 75A TO-220 Package Mosfet General Description The GT080N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1916. Power Mosfet 100V 10A to-252 for LED Lighting [May 24, 2022]
[May 24, 2022] Power Mosfet 100V 10A TO-252 for LED Lighting General Description The G10N10A-252 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1917. Factory Directly Transistor N+P Channel 60V 5A Sop-8 Mosfet [May 24, 2022]
[May 24, 2022] Factory Directly Transistor N+P Channel 60V 5A SOP-8 Mosfet General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1918. Discrete Component G01n20L 200V 2A Sot-23-3L Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G01N20L 200V 2A SOT-23-3L Mosfet for Pd General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1919. 1002L 100V 2A N-Channel (AO3442) Enhancement Mode Field Effect Mosfet [Mar 18, 2022]
[Mar 18, 2022] Product Description 1002L 100V 2A N-Channel (AO3442) Enhancement Mode Field Effect mosfet Part Number 1002L VDSS 100V ID 2A RDS 180mΩ @ vgs=4.5V Vth 1.8V Package SOT-23 Ciss 190 pF Crss 13 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1920. Pb Free RoHS SGS Certified 60V Vds P-Channel to-252 Dpak Trench Mosfet G25p06 with ISO [Nov 17, 2021]
[Nov 17, 2021] Product Description Pb free Rohs SGS certified 60V VDS P-Channel To-252 Dpak Trench Mosfet G25P06 Part Number G65P06K VDSS -60V ID -65A RDS 13mΩ @ vgs=10V Vth -1.8V Package TO-252 Ciss 5814 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
