Jiangsu Profile
Product List
1051. Hot Sale Insulated Gate Bipolar Transistor Dhg20t65D IGBT to-220f 
[Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 40 A Collector Current (Tc=100ºC) 20 A Pulsed ...
1052. 4A 800V N-Channel Enhancement Mode Power Mosfet B4n80 to-251b [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT B4N80 Drian-to-Source Voltage VDSS 800 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 4 A (T=100ºC) 2.5 A Drain ...
1053. 75A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT Dgc75f65m to-247 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±30 V Collector Current IC(T=25ºC) 150 A Collector Current (Tc=100ºC) 75 A Pulsed ...
1054. 40V/0.85MΩ /200A N-Mosfet Dse012n04na to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1055. 170A 85V N-Channel Enhancement Mode Power Mosfet DSP032n08na Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 120 A Drain ...
1056. 135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1057. 100V/1.7MΩ /240A N-Mosfet Dse022n10n3 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1058. 170A 100V N-Channel Enhancement Mode Power Mosfet Dse028n10n3 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 134 A Drain ...
1059. 40V/4.0MΩ /66A N-Mosfet DSP060n04la Dfn5X6 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Drain Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 66 A (T=100ºC) 47 A Single Pulse Avalanche ...
1060. 130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
1061. 10.6A 700V N-Channel Super Junction Power Mosfet Djf420n70t to-220f [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 10.6 A (T=100ºC) 7.6 A Drain ...
1062. 100V/5.5MΩ /100A N-Mosfet Dsd065n10L3a to-252 [Jul 16, 2026]
[Jul 16, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
1063. High Voltage Mosfet Dje660n80e to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
1064. 120V/12MΩ /70A N-Mosfet Dse140n12n3 to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
1065. 150V/7.5MΩ /115A N-Mosfet Dse090n15n3a to-263 [Jul 16, 2026]
[Jul 16, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
