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Zener Diode

2161.

Zener Diode Open Details in New Window [Aug 07, 2014]

Description: Zener diodes are one of our main products. 0.5W: DO-35 glass, 2V7 to 75V. 1.0W: DO-35 glass, 2V7 to 75V. 2W and 5W zener diode. Packaging: tape in box.

Company: Wuxi Xuyang Electronics Co., Ltd.

Rectifier Diodes

2162.

Rectifier Diodes Open Details in New Window [Aug 07, 2014]

Description: Voltage: 50-1000v. 1a: 1n4001-1n4007. 1.5a: 1n5391-1n5399. 2a: Rl201-rl207. 3a: 1n5401-1n5408. 6a: 6a05-6a10, p600a-p600m. Packaging: tape in box.

Company: Wuxi Xuyang Electronics Co., Ltd.

Switching Diodes (1N4448)

2163.

Switching Diodes (1N4448) Open Details in New Window [Aug 07, 2014]

1N4448 switching diodes VR: 75V, 200mA Package: DO-35

Company: Wuxi Xuyang Electronics Co., Ltd.

Diode (LL4148)

2164.

Diode (LL4148) Open Details in New Window [Aug 21, 2024]

LL4148 diode, Minimelf package, Tape in reel Packing: 2.5Kpcs/reel, 25Kpcs/box, 100Kpcs/carton. Please feel free to contact us if you are interested in any of our product. You are welcome at any time, and it will ...

Company: Wuxi Xuyang Electronics Co., Ltd.

Switching Diodes (1N914)

2165.

Switching Diodes (1N914) Open Details in New Window [Aug 07, 2014]

1N914 switching diodes VR: 75V Package: DO-35

Company: Wuxi Xuyang Electronics Co., Ltd.

Irf640 Equivalent Transistor 18n20 200V 18A to-220 Mosfet for LED Lighting

2166.

Irf640 Equivalent Transistor 18n20 200V 18A to-220 Mosfet for LED Lighting Open Details in New Window [Mar 19, 2021]

Product Description IRF640 equivalent transistor 18N20 200V 18A TO-220 mosfet for led lighting Part Number 18N20 VDSS 200V ID 18A RDS 136 mΩ @ vgs=10V Vth 1~3V Package TO-220 Ciss 836 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Factory Directly G12p03D3 Dfn3X3-8L -30V -12A Mosfet with Free Sample

2167.

Factory Directly G12p03D3 Dfn3X3-8L -30V -12A Mosfet with Free Sample Open Details in New Window [Nov 14, 2023]

Product Description Factory Directly G12p03D3 Dfn3X3-8L -30V -12A Mosfet with Free Sample Part Number G12P03D3 VDSS -30V ID -12A RDSON 24.5mΩ @ ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Vacuum Switching Tubes (TJ-1.14/80A)

2168.

Vacuum Switching Tubes (TJ-1.14/80A) Open Details in New Window [Aug 21, 2024]

The vacuum Interrupter adopts "one shut technology", ceramic shell, CuWC as the contact material; Interrupter is characterized by high insulation, low stop-flow, strong blowout ability, long life, small size etc, and ...

Company: Kunshan Guoli Electronic Technology Co., Ltd.

Vacuum Switching Tubes (TJ-1.14/80B)

2169.

Vacuum Switching Tubes (TJ-1.14/80B) Open Details in New Window [Aug 21, 2024]

The vacuum Interrupter adopts "one shut technology", ceramic shell, CuWC as the contact material; Interrupter is characterized by high insulation, low stop-flow, strong blowout ability, long life, small size etc, and ...

Company: Kunshan Guoli Electronic Technology Co., Ltd.

IGBT Power Transistor G12p10K -100V -12A Mosfet for Power Supply

2170.

IGBT Power Transistor G12p10K -100V -12A Mosfet for Power Supply Open Details in New Window [Aug 19, 2022]

Product Description IGBT power transistor G12P10K -100V -12A MOSFET for power supply Part Number G12P10K VDSS -100V ID -12A RDS 170mΩ @ vgs=10V Vth -1.9V Package TO-252 Ciss 760 pF Crss 170 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

SMD Transistor G16p03D3 Dfn3X3-8L -30V -16A P Channel Field Effect Mosfet

2171.

SMD Transistor G16p03D3 Dfn3X3-8L -30V -16A P Channel Field Effect Mosfet Open Details in New Window [Oct 08, 2021]

Product Description smd transistor G16P03D3 DFN3X3-8L -30V -16A P channel Field Effect mosfet Part Number G16P03D3 VDSS -30V ID -16A RDS 11.5mΩ @ vgs=4.5V Vth -1.5V Package DFN3*3 Ciss 1995 ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Factory Directly P Channel 30V 7A Dfn Package Mosfet

2172.

Factory Directly P Channel 30V 7A Dfn Package Mosfet Open Details in New Window [Nov 14, 2023]

Factory Directly P channel 30V 7A DFN Package MOSFET General Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...

Company: Wuxi Goford Semiconductor Co., Ltd.

G05np10s Mosfet 100V 5A Sop-8 N+P Mosfet

2173.

G05np10s Mosfet 100V 5A Sop-8 N+P Mosfet Open Details in New Window [Nov 14, 2023]

G05NP10S MOSFET 100V 5A SOP-8 N+P MOSFET General Description The G05NP10S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Ao6294 Alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application

2174.

Ao6294 Alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application Open Details in New Window [Nov 13, 2023]

AO6294 alternative Gt52n10d5 48A 100V Dfn5X6-8 Mosfet for Pd Application General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Dmg3402L-7 Equivalent Transistor Mosfet G3404 of 30V 5.8A Sot-23

2175.

Dmg3402L-7 Equivalent Transistor Mosfet G3404 of 30V 5.8A Sot-23 Open Details in New Window [Nov 14, 2023]

DMG3402L-7 Equivalent Transistor MOSFET G3404 of 30V 5.8A SOT-23 General Description The G3404 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...

Company: Wuxi Goford Semiconductor Co., Ltd.