Jiangsu Profile
Product List
2191. Factory Directly Mosfet Transistor G65p06D5 60V Dfn Package Mosfet 
[May 21, 2022]
[May 21, 2022] Factory Directly Mosfet Transistor G65P06D5 60V DFN Package Mosfet General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2192. Discrete Component G16p03s P Channel 30V 16A Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for PD General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2193. IC Component G08n02L 20V 8A 10mohm Sot-23-3L N Channel Mosfet [May 21, 2022]
[May 21, 2022] IC Component G08N02l 20V 8A 10mohm SOT-23-3L N Channel MOSFET General Description The G08N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2194. G01n20L Mosfet 200V 2A Sot-23-3L Package Transistor China Manufacturer [May 21, 2022]
[May 21, 2022] G01N20L MOSFET 200V 2A SOT-23-3L Package Transistor China Manufacturer General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2195. ISO9001 Certificate Mosfet Transistor of 60V Dfn Package [May 21, 2022]
[May 21, 2022] ISO9001 Certificate MOSFET Transistor of 60V DFN Package General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2196. Free Sample G48n03D3 30V 48A Dfn Package Mosfet for Mobile Charge [May 21, 2022]
[May 21, 2022] Free Sample G48N03D3 30V 48A Dfn Package Mosfet for Mobile Charge General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2197. Equivalent Transistor Fqd10n20L Substitute Mosfet of 200V 9A Dpak [May 21, 2022]
[May 21, 2022] Equivalent Transistor FQD10N20L Substitute MOSFET of 200V 9A DPAK General Description The 630A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2198. Power Mosfet Transistor Gt025n06D5 95A 60V Dfn Package Mosfet [May 21, 2022]
[May 21, 2022] Power Mosfet Transistor GT025N06D5 95A 60V DFN Package Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2199. Mur140/Mur160 Super Fast Recovery Diode with Do-15 Package [Apr 02, 2022]
[Apr 02, 2022] ABOUT US FAQ: 1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good ...
2200. Mosfet G20n06j 60V to-251 Package Mosfet with ISO9001 Certificate [Mar 18, 2022]
[Mar 18, 2022] MOSFET G20N06J 60V TO-251 Package MOSFET with ISO9001 Certificate General Description The G20N06J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2201. Transistor IC Chips 30V 30A Dfn N Channel Electronic Components for Laptop [Mar 18, 2022]
[Mar 18, 2022] Transistor IC Chips 30V 30A Dfn N Channel Electronic Components for Laptop General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2202. Mosfet Manufacturer G30n03D3 30V 30A Dfn3X3 Mosfet for Pd [Mar 18, 2022]
[Mar 18, 2022] MOSFET Manufacturer G30N03D3 30V 30A DFN3X3 MOSFET for PD General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2203. Discrete Component Sira52dp Alternative 60V 53A Mosfet [Mar 18, 2022]
[Mar 18, 2022] Discrete Component SIRA52DP Alternative 60V 53A Mosfet General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2204. Gc11n65 to-252 650V 11A 78W N-Channel 8n65 Semiconductor Power Transistor Super Junction Mosfet [Feb 21, 2022]
[Feb 21, 2022] Product Description GC11N65D5 DFN5*6-8L 650V 11A 78W N-Channel Vgs(th)max 4V Semiconductor Power Transistor Mosfet Part ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2205. G25n02 to-252 Fast Charger Semiconductor Electronic Components Power Rectifier Transistor Mosfet ... [Nov 30, 2021]
[Nov 30, 2021] Product Description G25N02 TO-252 Fast Charger Semiconductor Electronic Components Power Rectifier Transistor Mosfet with RoHS For more products details, please contact us ! Packaging & Shipping 1. ...
Company: Wuxi Goford Semiconductor Co., Ltd.
