Jiangsu Profile
Product List
2581. Low Rdson Sgt Mosfet 60V 45A Dfn3*3 Gt45n06 for Fast Charger 
[May 27, 2022]
[May 27, 2022] Low Rdson SGT MOSFET 60V 45A DFN3*3 GT45N06 for Fast Charger General Description The GT45N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2582. New Original Mosfet G01n20L 200V 2A Sot-23-3L Mosfet for Pd [May 27, 2022]
[May 27, 2022] New Original Mosfet G01N20L 200V 2A SOT-23-3L Mosfet for PD General Description The G01N20L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2583. Factory Directly N-Channel Trench Mosfet of to-220 100V 12A Parameters [May 27, 2022]
[May 27, 2022] Factory Directly Dual N-Channel Trench Mosfet of TO-220 100V 12A Parameters General Description The G12P10T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2584. SMD Transistor Aod4189 Alternative 45p40 -40V -50A to-252 Mosfet [May 27, 2022]
[May 27, 2022] SMD Transistor AOD4189 Alternative 45p40 -40V -50A to-252 Mosfet General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2585. Factory Directly 60V N+P Channel Sop-8 Mosfet [May 27, 2022]
[May 27, 2022] Factory Directly 60V N+P channel SOP-8 Mosfet General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2586. Original Power Mosfet Aod4286 Replacement G15n10c 100V 15A Mosfet with to-252 Package [May 27, 2022]
[May 27, 2022] Original Power MOSFET AOD4286 Replacement G15N10C 100V 15A MOSFET with TO-252 Package General Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2587. Mosfet Ao3438 Substitute 20V 6A N-Channel Mosfet with Sot-23 Package [May 27, 2022]
[May 27, 2022] MOSFET AO3438 Substitute 20V 6A N-channel Mosfet with SOT-23 Package General Description The 2300F uses advanced trench technology to achieve extremely low on-resistance. And fast switching speed and improved ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2588. Fdn337n Substitute Mosfet Transistor 3400L 30V 5.6A N Channel Sot-23 [May 24, 2022]
[May 24, 2022] FDN337N Substitute Mosfet Transistor 3400L 30V 5.6A N CHANNEL SOT-23 General Description The 3400L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2589. Electronic Components 3400 40V 50A Sot-23 Power Transistor China Supplier [May 24, 2022]
[May 24, 2022] Electronic Components 3400 40V 50A SOT-23 Power Transistor China Supplier General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2590. G05np06s2 N and P Channel 60V Sop-8 Mosfet [May 24, 2022]
[May 24, 2022] G05NP06S2 N and P Channel 60V SOP-8 MOSFET General Description The G05NP06S2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2591. Electronic Component Mosfet Transistor G65p06D5 60V Dfn Package Mosfet [May 24, 2022]
[May 24, 2022] Electronic Component Mosfet Transistor G65P06D5 60V DFN Package Mosfet General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2592. Goford G16n03s 30V 12A N Channel Mosfet with Sop-8 Package [May 21, 2022]
[May 21, 2022] GOFORD G16N03S 30V 12A N Channel MOSFET with SOP-8 Package General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2593. Factory Directly Mosfet Transistor G65p06D5 60V Dfn Package Mosfet [May 21, 2022]
[May 21, 2022] Factory Directly Mosfet Transistor G65P06D5 60V DFN Package Mosfet General Description The G65P06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2594. Discrete Component G16p03s P Channel 30V 16A Mosfet for Pd [May 21, 2022]
[May 21, 2022] Discrete Component G16P03S P Channel 30V 16A Mosfet for PD General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
2595. IC Component G08n02L 20V 8A 10mohm Sot-23-3L N Channel Mosfet [May 21, 2022]
[May 21, 2022] IC Component G08N02l 20V 8A 10mohm SOT-23-3L N Channel MOSFET General Description The G08N02L uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
