Jiangsu Profile
Product List
2806. D965s 5-Inch Small Signal Transistor Chips/Silicon Wafer 
[Dec 09, 2020]
[Dec 09, 2020] Die Size 0.89mm×0.89mm BVCEO 20V BVCBO 40V BVEBO 7V IC 4A hFE 300~1500 VCE(sat) 1V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2807. 2222A 5-Inch Fast Switching Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.46mm×0.46mm BVCEO 40V BVCBO 75V BVEBO 6V IC 0.6A hFE 100~300 VCE(sat) 1V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
2808. Bc807 5-Inch High Frequency Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.53mm×0.53mm BVCEO -500V BVCBO -45V BVEBO -6V IC -0.5A hFE 125~600 VCE(sat) -0.65V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
2809. 11005s 4-Inch NPN High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
2810. P2.0 4-Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2000μ m×2000μ m Size of Bonding Pad Base 430μ m×620μ m Emitter 430μ m×620μ m Thickness 270±20μm Scribe Width 80μm Metallization Front: Al ...
2811. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
2812. P1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
2813. P1.8 4-Inch Power Transistor Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1780μ m×1780μ m Size of Bonding Pad Base 495μ m×495μ m Emitter 495μ m×495μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
2814. 882m 5-Inch Medium-Power Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1..08mm×1.08mm BVCEO 30V IC 3A BVCBO/BVEBO 30V/7V hFE Min.:100 Max:400 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
2815. 50W + 50W HiFi Class 2.0 Stereo Digital Amplifier Tpa3116 Advanced [May 25, 2018]
[May 25, 2018] HIFI Class 2.0 Stereo Digital Amplifier TPA3116 Advanced 50W + 50W Note: The power cable is not included. If your speaker power is not large, you can use 12V 5A power supply; If large power speaker, you can use 19V ...
2816. Amplifier [Jun 07, 2023]
[Jun 07, 2023] The function of an on-board power amplifier is to select and preprocess the audio input signal, amplify the power, and enable the electrical signal to have the ability to drive the speaker. Car amplifiers are slightly ...
Company: Taixing Jiale Electroic Co., Ltd
2817. 1/6W Power Carbon Film Resistors 5% Tolerance Resistor [Jan 20, 2025]
[Jan 20, 2025] Power:1/6W Resistance Range : 1Ω~10MΩ 1Ω 2.2Ω 4.7Ω 5.1Ω 6.2Ω 6.8Ω 7.5Ω 8.2Ω 10Ω 11Ω 12Ω 15Ω 18Ω 20Ω 22Ω 24Ω ...
Company: Yancheng Hyde Electronics Co., Ltd.
2818. Carbon Film Resistor in Tape Packing [Jan 20, 2025]
[Jan 20, 2025] Stability and perfect high frequency feature; Minus temperature coefficient, low noise; Wide resistance range, stable pulse loading. Package: Loose form or tape form Power: 1/8W, 1/6W, 1/4W, 1/2W, 1W, 2W, ...
Company: Yancheng Hyde Electronics Co., Ltd.
2819. Te Amphenol Sumitomo Brand Housing Terminal Connector Hot Sales [Dec 27, 2024]
[Dec 27, 2024] Company Profile Suzhou Ugiant New Materials Co., LTD mainly specializes in manufacturing and export of cables and connectors. We are ...
2820. 14D220K electronic component semiconductor Varistors [Aug 05, 2024]
[Aug 05, 2024] Product Description FEATURES Wide operating voltages ranging from 11 VRMS to 1000 VRMS. Fast response time of less than 25ns, instantly clamping the transient over voltage. High surge current handling ...
