Jiangsu Profile

Product List
3106. Factory Price Gantry Transistor Spot Welding Machine Battery Welder Lithium Battery Spot Welder for ...
[Aug 04, 2023]

Product Description Advantages This type of AC spot welder utilizes the general mains supply to lower the voltage and increase the electric current. Such kind of low voltage but large current will be transmitted from ...
3107. Microprocessor Transistor Ebony Korean Strings Colorful Shoulder Rest Violin
[Mar 28, 2023]

Overview Essential details Place of Origin: Jiangsu, China Model Number: 4/4~1/16 Face Material: laminated wood Back / Side ...
Company: Taixing Xingyun Violin Company
3108. Mosfet Transistor G50n10 100V 50A to-220 Packaging
[Aug 19, 2022]

Product Description G50N10 100V 50A TO-220 packaging Mosfet (electronic components distributor) Part Number G50N10 VDSS 100V ID 50A RDS 14-17mΩ @vgs=10V 15-18mΩ@vgs=4.5V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3109. G08n02g Mosfet Transistor 20V 12A Sot-223 Packaging for Fast Charge Application
[Aug 19, 2022]

Product Description G08N02H 20V 12A SOT-223 packaging Mosfet (electronic components distributor) Part Number G08N02H VDSS 20V ID 12A RDS 8.9mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3110. Mosfet Transistor 6703 -20/20V -3/3A Sot-23-6 Packaging for Fast Charge Application
[Aug 05, 2024]

Product Description 6703 20/-20V 2.9/-3A SOT-23-6 packaging Mosfet (electronic components distributor) Part Number 6703 VDSS 20/-20V ID 2.9/-3A RDS 30-45mΩ 80-110mΩ @ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3111. Transistor Spruce Dark Cheap Bow Unvarnished Violin
[Mar 28, 2023]

Overview Essential details Place of Origin: Jiangsu, China Model Number: 4/4~1/16 Face Material: laminated wood Back / Side ...
Company: Taixing Xingyun Violin Company
3112. Microprocessor Transistor Maple Silencer Light Violin Oblong Case
[Mar 28, 2023]

Overview Essential details Place of Origin: Jiangsu, China Model Number: 4/4~1/16 Face Material: laminated wood Back / Side ...
Company: Taixing Xingyun Violin Company
3113. Mosfet Transistor G12p10K -100V -12A to-252 Packaging
[Aug 19, 2022]

Product Description G12P10K -100V -12A TO-252 packaging Mosfet (electronic components distributor) Part Number G12P10K VDSS -100V ID -12A RDS 170mΩ @vgs=10V Vth -1.9V Package TO-252 Ciss 760 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3114. Mosfet Transistor G12p10te -100V -12A to-220 Packaging
[Aug 19, 2022]

Product Description G12P10TE -100V -12A TO-220 packaging Mosfet (electronic components distributor) Part Number G12P10TE VDSS -100V ID -12A RDS 170-200mΩ @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3115. Mosfet Transistor 18n20f 200V 18A to-220f Packaging
[Aug 19, 2022]

Product Description 18N20F 200V 18A TO-220F packaging Mosfet (electronic components distributor) Part Number 18N20F VDSS 200V ID 18A RDS 0.13mΩ @vgs=10V Vth 1.5V Package TO-220F Ciss 836 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
3116. Electronic Component Transistor Maple Price 4 Strings Stringed Accessories Violin
[Mar 28, 2023]

Overview Essential details Place of Origin: Jiangsu, China Model Number: 4/4~1/16 Face Material: laminated wood Back / Side ...
Company: Taixing Xingyun Violin Company
3117. Transistor Base Copper Alloy C14500
[Jun 20, 2022]

-------------------------------------------------------------------------------------------------------- ASTM : C14500 Compositions : CuTe Characteristics : 1, Corrosion resistant ...
Company: Suhua Copper Alloy Co., Ltd.
3118. GaN on Silicon Wafer Manufacturer 4'', 6'', 8'' for Power Hemt Transistors 40-650V.
[Aug 22, 2025]

GaN on Silicon wafer Manufacturer 4'', 6'', 8'' for power HEMT transistors 40-650V. We Supply 100mm,150mm and 200mm diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon ...
Company: Homray Material Technology
3119. Tip117 4-Inch Darlington Transistors Chips/Silicon Wafer
[Dec 09, 2020]

Die Size 1.80mm×1.80mm BVCEO -100V BVCBO -100V BVEBO -6V IC -4A hFE 2000~10000 VCE(sat) -2V fT 10MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
3120. 13009 4-Inch NPN High-Voltage Switching Transistor Diced Silicon Wafer
[Dec 09, 2020]

Die Size 4.3mm×4.3mm Size of Bonding Pad Base 690*1000μm2 Emitter 825*1200μm2 Thickness 240±10μm Scribe Width 60μm Metallization Front: Al 4.3±0.3μm Front: Al ...
