Jiangsu Profile
Product List
316. SD1446 Hg1446 Transistor 
[Aug 14, 2024]
[Aug 14, 2024] New SD1446 is produced by HG China. We will send the parts soon. But if your request is very urgent, I don't suggest you buy our parts. All the SD1446 you purchase in one shipment use the dies(chips) of the same ...
317. Hg2879 2sc2879 Transistor [Aug 14, 2024]
[Aug 14, 2024] New 2SC2879 is produced by HG China. Can replace Toshiba 2SC2879 well. We will send the parts soon. But if your request is very urgent, I don't suggest you buy our parts. All the 2SC2879 you purchase in one ...
318. Diamond Shaped Baseplate with Enclosure for IGBT Module [Nov 21, 2024]
[Nov 21, 2024] Diamond shaped baseplate with enclosure for IGBT module of Electric vehicles Heatsink for liquid cooling solution
319. Water Drop Pinfin Baseplate for IGBT/Sic Module of EV [Nov 21, 2024]
[Nov 21, 2024] Water drop pinfin baseplate for IGBT module of EV Heatsink of cooling solution
320. Radial Lead Cut Machine; Components Loose Cut Machine; Triode Cutter [Jun 11, 2021]
[Jun 11, 2021] Compact Radial Machine Elctronics; Capacitor Cutting Machine X-5060 Product Description Before cut machine : Atere cut machine CUT Specification: Automatic radial capacitor/LED lead ...
321. Transistor 3415A 20V 4A Mosfet Dmp2035u-7 IC Part [Mar 16, 2022]
[Mar 16, 2022] Product Description Transistor 3415A 20V 4A Mosfet DMP2035U-7 IC Part Part Number 3415A VDSS -20V ID -4A RDS 35 mΩ @ vgs=4.5V Vth -0.93V Package SOT-23 Ciss 950 pF Crss 120 pF Datasheet You ...
Company: Wuxi Goford Semiconductor Co., Ltd.
322. Transistor 3415A 20V 4A Mosfet with ESD LED Display Power Supply [Aug 19, 2022]
[Aug 19, 2022] Product Description Transistor 3415A 20V 4A Mosfet with ESD led display power supply Part Number 3415A VDSS -20V ID -4A RDS 35 mΩ @ vgs=4.5V Vth -0.93V Package SOT-23 Ciss 950 pF Crss 120 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
323. High Quality out Beam Tetrode Electron Tube for Power Amplifier [May 06, 2019]
[May 06, 2019] Output beam tetrode with eight foots, an absolute maximum anode dissipation rating of 12w used for power amplifier, heater voltage; 6.3v, heater current; 0.45A, Inter electrode capacitance; Imput; 9PF, output; 7.5PF, ...
Company: Sinotronics Co., Ltd.
324. High Quality Beam Power Electron Tube [May 06, 2019]
[May 06, 2019] The 6146B is a beam power tube of high power sensitivity for RF Power amplifier and oscillator service and as an AF power amplifier and modulator in both mobile and fixed equipmen, the 6146B is unilaterally ...
Company: Sinotronics Co., Ltd.
325. 3415A -20V -4A P Channel Mosfet [Aug 19, 2022]
[Aug 19, 2022] Product Description Transistor 3415A 20V 4A Mosfet with ESD led display power supply Part Number 3415A VDSS -20V ID -4A RDS 35 mΩ @ vgs=4.5V Vth -0.93V Package SOT-23 Ciss 950 pF Crss 120 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
326. High Quality Beam Pentode Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-Z Beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
327. Kt88-T Beam Pentode 6.3V Indirectly Heated Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-Z Beam pentode 6.3v indirectly heated, the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A. F. Amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
328. Beam Pentode 6.3V Indirectly Heated Electron Tube [May 06, 2019]
[May 06, 2019] The KT88-Z beam pentode 6.3v indirectly heated , the kt88 has an anode dissipation of 35w and is primarily designed for the output stage of an A.F. amplifier for whcih two valves will provide up to 100 w output it is ...
Company: Sinotronics Co., Ltd.
329. Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for BMS Application [Jun 10, 2022]
[Jun 10, 2022] Product Description GT12N06S 60V 12A Silicon Triode Transistor Mosfet for BMS application Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
330. (AO4264) Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for Charger [Mar 19, 2021]
[Mar 19, 2021] Product Description (AO4264) Gt12n06s 60V 12A Silicon Triode Transistor Mosfet for charger Shield Gate Trench Mosfet, Compared with ordinary trench MOS, SGTMOS has improved breakdown electric field, ...
Company: Wuxi Goford Semiconductor Co., Ltd.
