Jiangsu Profile

Product List
22381. Ikw75n60t
[May 14, 2025]

Parametrics IKW75N60T Eoff (Hard Switching) 2.9 mJ Eon 2.9 mJ IC (@ 25° ) max 80 A IC (@ 100° ) max 75 A ICpuls max 225 A IF max 80 A IFpuls max 225 A Irrm 38.5 A Ptot max 428 ...
22382. Infineon IGBT
[May 14, 2025]

Parametrics FF600R12ME4_B72 Configuration Half-bridge Dimensions (width) 62 mm Dimensions (length) 152 mm Features Solder Pin Housing EconoDUAL™ 3 IC(nom) / IF(nom) 600 A IC max 600 ...
22383. Infineon IGBT FF450r12me4 FF600r12me4
[May 14, 2025]

Parametrics FF450R12ME4 Configuration Half-bridge Dimensions (width) 62 mm Dimensions (length) 152 mm Features Solder Pin Housing EconoDUAL™ 3 IC(nom) / IF(nom) 450 A IC max 450 ...
22384. General Rectifier (Bolt Type) (ZP Series)
[Aug 22, 2024]

Common rectifier (bolt type) ZP5A--500A Application 1. Used in rectifying melectric circuit in electrochemistry, electrolysis, electropleting, traction, power 2. Supply for switch gear operation, cec. 3. Hermetic ...
22385. Common Rectifier (flat type) ZP 200A--5000A
[Aug 22, 2024]

Certificate: SGS, CE, ISO9001 Rectifier Diode Module 2. Brand: Ximenkan 3. Lowest price 4. New in stock Flat rectifier, rectifier diode, ZP series. Features 1. Optimized for line frequency rectifiers 2. ...
22386. Sic Power Module Suppliers Sic Sbd Module Manufacturer
[Aug 21, 2024]

SiC SBD Device Manufacturer SiC MOSFET supplier Homray Semiconductor Technology introduces our Silicon Carbide Schottky diodes. The advantages of these products is improved circuit efficiency(low overall cost), low ...
Company: Homray Semiconductor Technology
22387. IGBT Power Module Manufacturer
[Aug 21, 2024]

igbt power module manufacturer IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN ...
Company: Homray Semiconductor Technology
22388. Silicon Wafer
[Apr 18, 2025]

Silicon Carbide (SiC) is recognized as the core material of third-generation semiconductors . It exhibits exceptional properties, including: High voltage resistance (10× Higher breakdown electric field than ...
Company: Till-Bo Limited
22389. 2/4inch Silicon Carbide Sic Substrate
[Aug 08, 2017]

SiC Wafer Typical Specifications: Grade: Production / Research / Dummy Micropipe Density: < 5 cm-2 / < 15 cm-2 / < 50 cm-2 Orientation: <0001> or ...
Company: Crymstal Material Co., Ltd
22390. ISC Silicon PNP Power Transistor 2SB772
[Dec 11, 2015]

DESCRIPTION High Collector Current -IC= -3A High Collector-Emitter Breakdown Voltage V(BR)CEO= -30V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD882 APPLICATIONS Designed for use in ...
22391. ISC Silicon PNP Power Transistor 2SA1757
[Nov 02, 2015]

DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) High Switching Speed Low Saturation Voltage- VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) Wide Area of Safe Operation APPLICATIONS Designed ...
22392. Mosfet Transistor
[Oct 10, 2015]

MOSFET PRODUCT ...
22393. ISC Silicon NPN Power Transistor (BU508A)
[Aug 09, 2014]

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 125W@TC= 25 APPLICATIONS Designed for use in large screen color deflection circuits.
22394. Advanced Psi Membrane Bw4040 for High-Quality Water Filtration
[Jun 18, 2025]

Product Description PSI MEMBRANE®Pro-BW brackish water membrane ,incorporated with cutting-edge Thin Film Nanocomposite (TFN) technology, perfectly designed for treating reclaimed wastewater, surface water, and ...
Company: Proshare Innovation Suzhou Co., Ltd.
22395. Ms/Mc05 -24 Ab Glue Two-Component Mixing Tube
[Jul 02, 2025]

Product Description Product Parameters model colour 1. Total length 2. pitch number 3. internal diameter of pipe 4. external diameter of pipe 5. Rubber dispensing diameter A Interface inner ...
Company: Suzhou Shenglong Precision Plastic Hardware Co., Ltd.
