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IGBT Power Module Manufacturer

22516.

IGBT Power Module Manufacturer Open Details in New Window [Aug 21, 2024]

igbt power module manufacturer IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN ...

Company: Homray Semiconductor Technology

Silicon Wafer

22517.

Silicon Wafer Open Details in New Window [Apr 18, 2025]

Silicon Carbide (SiC) is recognized as the core material of third-generation semiconductors . It exhibits exceptional properties, including: High voltage resistance (10× Higher breakdown electric field than ...

Company: Till-Bo Limited

2/4inch Silicon Carbide Sic Substrate

22518.

2/4inch Silicon Carbide Sic Substrate Open Details in New Window [Aug 08, 2017]

SiC Wafer Typical Specifications: Grade: Production / Research / Dummy Micropipe Density: < 5 cm-2 / < 15 cm-2 / < 50 cm-2 Orientation: <0001> or ...

Company: Crymstal Material Co., Ltd

ISC Silicon PNP Power Transistor 2SB772

22519.

ISC Silicon PNP Power Transistor 2SB772 Open Details in New Window [Dec 11, 2015]

DESCRIPTION High Collector Current -IC= -3A High Collector-Emitter Breakdown Voltage V(BR)CEO= -30V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD882 APPLICATIONS Designed for use in ...

Company: Inchange Semiconductor Company Limited

ISC Silicon PNP Power Transistor 2SA1757

22520.

ISC Silicon PNP Power Transistor 2SA1757 Open Details in New Window [Nov 02, 2015]

DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) High Switching Speed Low Saturation Voltage- VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) Wide Area of Safe Operation APPLICATIONS Designed ...

Company: Inchange Semiconductor Company Limited

Mosfet Transistor

22521.

Mosfet Transistor Open Details in New Window [Oct 10, 2015]

MOSFET PRODUCT ...

Company: Inchange Semiconductor Company Limited

ISC Silicon NPN Power Transistor (BU508A)

22522.

ISC Silicon NPN Power Transistor (BU508A) Open Details in New Window [Aug 09, 2014]

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 125W@TC= 25 APPLICATIONS Designed for use in large screen color deflection circuits.

Company: Inchange Semiconductor Company Limited

Advanced Psi Membrane Bw4040 for High-Quality Water Filtration
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22523.

Advanced Psi Membrane Bw4040 for High-Quality Water Filtration Open Details in New Window [Jun 18, 2025]

Product Description PSI MEMBRANE&reg;Pro-BW brackish water membrane ,incorporated with cutting-edge Thin Film Nanocomposite (TFN) technology, perfectly designed for treating reclaimed wastewater, surface water, and ...

Company: Proshare Innovation Suzhou Co., Ltd.

Ms/Mc05 -24 Ab Glue Two-Component Mixing Tube
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22524.

Ms/Mc05 -24 Ab Glue Two-Component Mixing Tube Open Details in New Window [Jul 02, 2025]

Product Description Product Parameters model colour 1. Total length 2. pitch number 3. internal diameter of pipe 4. external diameter of pipe 5. Rubber dispensing diameter A Interface inner ...

Company: Suzhou Shenglong Precision Plastic Hardware Co., Ltd.

Mc10-12 Round-Mouth Static Mixing Tube
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22525.

Mc10-12 Round-Mouth Static Mixing Tube Open Details in New Window [Jul 02, 2025]

Product Description Product Parameters model colour 1. Total length 2. pitch number 3. internal diameter of pipe 4. external diameter of pipe 5. Rubber dispensing diameter A Interface inner ...

Company: Suzhou Shenglong Precision Plastic Hardware Co., Ltd.

Sic Mosfet Module Manufacturer

22526.

Sic Mosfet Module Manufacturer Open Details in New Window [Aug 21, 2024]

SiC MOSFET Module Manufacturer Homray Semiconductor Technology provide SiC MOSFET, the advantages of SiC MOSFET is :Highest efficiency for reduced cooling effort,Longer lifetime and higher reliability,Higher ...

Company: Homray Semiconductor Technology

6 Inch RF GaN Hemt Structures on Silicon Manufacturer

22527.

6 Inch RF GaN Hemt Structures on Silicon Manufacturer Open Details in New Window [Oct 25, 2024]

6 inch RF GaN HEMT Structures on Silicon Manufacturer Homray Material Technology produces and supplies GaN-on-Silicon epi wafer with 4 inch,6 inch and 8 inch for power device.The products have extremely high electron ...

Company: Homray Material Technology

2/4/6inch Gallium Arsenide GaAs Substrate

22528.

2/4/6inch Gallium Arsenide GaAs Substrate Open Details in New Window [Aug 23, 2024]

GaAs Wafer Typical Specifications: Orientation: <100> / <111> or Others Diameter: 2inch / 3inch / 4inch / 6inch Thickness: 350 / 625 ...

Company: Crymstal Material Co., Ltd

2inch Free-Standing GaN Substrate

22529.

2inch Free-Standing GaN Substrate Open Details in New Window [Aug 23, 2024]

Free-Standing GaN Substrate Typical Specifications: Orientation: C-Plane(0001)/A-Plane(11-20)/R-Plane(1-102)/M-Plane(10-10) Diameter: 2inch / 10&times;10 ...

Company: Crymstal Material Co., Ltd

Wireless IR Temperature Controller

22530.

Wireless IR Temperature Controller Open Details in New Window [Nov 11, 2014]

Wireless temperature controller is a new product based on ZigBee/SmartRoom technology. Users can remote monitoring the temperature range within the selected region through any mobile devices. Besides smart home ...

Company: Nanjing IOT Sensor Technology Co., Ltd.