Jiangsu Profile
Product List
22486. Sic Power Module Suppliers Sic Sbd Module Manufacturer 
[Aug 21, 2024]
[Aug 21, 2024] SiC SBD Device Manufacturer SiC MOSFET supplier Homray Semiconductor Technology introduces our Silicon Carbide Schottky diodes. The advantages of these products is improved circuit efficiency(low overall cost), low ...
Company: Homray Semiconductor Technology
22487. IGBT Power Module Manufacturer [Aug 21, 2024]
[Aug 21, 2024] igbt power module manufacturer IGBT can be constructed with the equivalent circuit that consists of two transistors and MOSFET, as the IGBT posses the output of the below combination of the PNP transistor, NPN ...
Company: Homray Semiconductor Technology
22488. Silicon Wafer [Apr 18, 2025]
[Apr 18, 2025] Silicon Carbide (SiC) is recognized as the core material of third-generation semiconductors . It exhibits exceptional properties, including: High voltage resistance (10× Higher breakdown electric field than ...
Company: Till-Bo Limited
22489. 2/4inch Silicon Carbide Sic Substrate [Aug 08, 2017]
[Aug 08, 2017] SiC Wafer Typical Specifications: Grade: Production / Research / Dummy Micropipe Density: < 5 cm-2 / < 15 cm-2 / < 50 cm-2 Orientation: <0001> or ...
Company: Crymstal Material Co., Ltd
22490. ISC Silicon PNP Power Transistor 2SB772 [Dec 11, 2015]
[Dec 11, 2015] DESCRIPTION High Collector Current -IC= -3A High Collector-Emitter Breakdown Voltage V(BR)CEO= -30V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD882 APPLICATIONS Designed for use in ...
22491. ISC Silicon PNP Power Transistor 2SA1757 [Nov 02, 2015]
[Nov 02, 2015] DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) High Switching Speed Low Saturation Voltage- VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A) Wide Area of Safe Operation APPLICATIONS Designed ...
22492. Mosfet Transistor [Oct 10, 2015]
[Oct 10, 2015] MOSFET PRODUCT ...
22493. ISC Silicon NPN Power Transistor (BU508A) [Aug 09, 2014]
[Aug 09, 2014] Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) High Power Dissipation- : PD= 125W@TC= 25 APPLICATIONS Designed for use in large screen color deflection circuits.
22494. Advanced Psi Membrane Bw4040 for High-Quality Water Filtration [Jun 18, 2025]
[Jun 18, 2025] Product Description PSI MEMBRANE®Pro-BW brackish water membrane ,incorporated with cutting-edge Thin Film Nanocomposite (TFN) technology, perfectly designed for treating reclaimed wastewater, surface water, and ...
Company: Proshare Innovation Suzhou Co., Ltd.
22495. Ms/Mc05 -24 Ab Glue Two-Component Mixing Tube [Jul 02, 2025]
[Jul 02, 2025] Product Description Product Parameters model colour 1. Total length 2. pitch number 3. internal diameter of pipe 4. external diameter of pipe 5. Rubber dispensing diameter A Interface inner ...
Company: Suzhou Shenglong Precision Plastic Hardware Co., Ltd.
22496. Mc10-12 Round-Mouth Static Mixing Tube [Jul 02, 2025]
[Jul 02, 2025] Product Description Product Parameters model colour 1. Total length 2. pitch number 3. internal diameter of pipe 4. external diameter of pipe 5. Rubber dispensing diameter A Interface inner ...
Company: Suzhou Shenglong Precision Plastic Hardware Co., Ltd.
22497. GaN on Silicon Wafer Manufacturer 4'', 6'', 8'' for Power Hemt Transistors 40-650V. [May 20, 2025]
[May 20, 2025] GaN on Silicon wafer Manufacturer 4'', 6'', 8'' for power HEMT transistors 40-650V. We Supply 100mm,150mm and 200mm diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon ...
Company: Homray Material Technology
22498. Sic Mosfet Module Manufacturer [Aug 21, 2024]
[Aug 21, 2024] SiC MOSFET Module Manufacturer Homray Semiconductor Technology provide SiC MOSFET, the advantages of SiC MOSFET is :Highest efficiency for reduced cooling effort,Longer lifetime and higher reliability,Higher ...
Company: Homray Semiconductor Technology
22499. 6 Inch RF GaN Hemt Structures on Silicon Manufacturer [Oct 25, 2024]
[Oct 25, 2024] 6 inch RF GaN HEMT Structures on Silicon Manufacturer Homray Material Technology produces and supplies GaN-on-Silicon epi wafer with 4 inch,6 inch and 8 inch for power device.The products have extremely high electron ...
Company: Homray Material Technology
22500. 2/4/6inch Gallium Arsenide GaAs Substrate [Aug 23, 2024]
[Aug 23, 2024] GaAs Wafer Typical Specifications: Orientation: <100> / <111> or Others Diameter: 2inch / 3inch / 4inch / 6inch Thickness: 350 / 625 ...
Company: Crymstal Material Co., Ltd
