Jiangsu Profile
Product List
23491. Original New Mosfet Supplier 60V 20A Dfn Mosfet with RoHS Certificate 
[Aug 19, 2022]
[Aug 19, 2022] Original New MOSFET Supplier 60V 20A DFN MOSFET with ROHS Certificate General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23492. Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package [Aug 19, 2022]
[Aug 19, 2022] Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23493. N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application [Aug 19, 2022]
[Aug 19, 2022] N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23494. Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter [Aug 19, 2022]
[Aug 19, 2022] AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23495. Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original factory directly N Channel 60V 6A sot-23-3l Package mosfet with SGS Certificate General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23496. High Efficiency Rectifiers Her307 [May 12, 2021]
[May 12, 2021] Product Display Using the unidirectional conductivity of the rectifier diode and a certain circuit connection (half wave or full wave rectifier), the polarity and the instantaneous value of the ...
23497. Jtr0160b4 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.60mm×1.60mm VDRM 600V VRRM 600V IT 2A ITSM 20A IGT(MAX.) 10/10/10/20mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23498. Jtr0180b4 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.80mm×1.80mm VDRM 600V VRRM 600V IT 4A ITSM 40A IGT(MAX.) 10/10/10/30mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23499. Jtr0190b3 4-Inch Triacs Thyristor Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.90mm×1.90mm VDRM 600V VRRM 600V IT 4A ITSM 35A IGT(MAX.) 20/20/20/-mA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23500. Bas70 4-Inch Small-Signal Schottky Diode Chips/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.23mm×0.23mm IF 70mA VR 73V VF/VF1 0.95/0.39V IR 0.09μA CT 2pF trr 5ns Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise ...
23501. S30p20alx 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.76mm×0.76mm IF 1000mA VR 20V IR 30μA VF1 0.5V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23502. S30p40alx 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.76mm×0.76mm IF 1000mA VR 40V IR 10μA VF1 0.56V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23503. S28n60aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 60V VF1 0.66V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23504. S28n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 40V VF1 0.55V IR 50μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23505. S28n20aly5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 20V VF1 0.45V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
