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4 Inch GaN on Silicon Epitaxial Wafer

11701.

4 Inch GaN on Silicon Epitaxial Wafer Open Details in New Window [Nov 05, 2024]

GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

4 Inch GaN Substrate Wafer Manufacturer Un-Doped

11702.

4 Inch GaN Substrate Wafer Manufacturer Un-Doped Open Details in New Window [Aug 26, 2025]

4 inch GaN Substrate wafer Manufacturer un-doped 100mm (4 inch) GaN substrate wafer in stock from GaN wafer manufacturer and supplier of HMT. we offer both un-doped N type and si-doped N type GaN wafer. The bottom ...

Company: Homray Material Technology

4h-Si 500 to 600um Sic Wafer Manufacturer

11703.

4h-Si 500 to 600um Sic Wafer Manufacturer Open Details in New Window [Aug 25, 2025]

4H-SI 500 to 600um SiC Wafer Manufacturer Homray Material Technology provide 500um to 600um thickness SiC Wafers. These wafers we called As-cut SiC wafer which means unlapping and unpolished. Domestic and foreign ...

Company: Homray Material Technology

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate)

11704.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

Disc Type Fast Switching Thyristors, Inverter Thyristor, Kk SCR Thyristor

11705.

Disc Type Fast Switching Thyristors, Inverter Thyristor, Kk SCR Thyristor Open Details in New Window [Aug 23, 2024]

***Our main business*** 1)thyristor and diode chips 2)thyristor: Phase control thyristor(kp), fast switching thyristor(kk), Bi-directional Triode Thyristor(TRIAC). 3)diode: Rectifier diode(zp), fast recovery ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

4 Inch Gallium Nitride N Type GaN Substrate Manufacturer Ssp

11706.

4 Inch Gallium Nitride N Type GaN Substrate Manufacturer Ssp Open Details in New Window [Aug 26, 2025]

4 inch Gallium Nitride N type GaN Substrate Manufacturer SSP HMT is a leading manufacturer and supplier of GaN wafer, we can offer single side polished 4 inch sapphire GaN wafer with favourable price at the ...

Company: Homray Material Technology

GaN/Si Epitaxy Wafer Manufacturer Service on 8 Inch for GaN on Si

11707.

GaN/Si Epitaxy Wafer Manufacturer Service on 8 Inch for GaN on Si Open Details in New Window [Aug 25, 2025]

GaN/Si Epitaxy Wafer Manufacturer Service on 8 inch for GaN on Si Gallium Nitride (GaN) epitaxial wafers (epi-wafers) manufacturer Homray Material Technology offer 8 inch GaN-on-Si Epi wafer for domestic and foreign ...

Company: Homray Material Technology

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ...

11708.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate

11709.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped

11710.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped Open Details in New Window [Nov 05, 2024]

GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

Dummy Sic Ingots Manufacturer for Laser Machine Testing

11711.

Dummy Sic Ingots Manufacturer for Laser Machine Testing Open Details in New Window [Aug 25, 2025]

Dummy SiC ingots manufacturer for laser machine testing A reliable SiC ingot and As cut SiC wafer manufacturer and supplier you can trust in China! We offer both SiC ingots,SiC as cut wafer and SiC substrate wafer ...

Company: Homray Material Technology

4 Inch Unpolished Sic Wafer Supplier No Lapping 900um Thickness

11712.

4 Inch Unpolished Sic Wafer Supplier No Lapping 900um Thickness Open Details in New Window [Aug 25, 2025]

4 inch Unpolished SiC Wafer Supplier no lapping 900um Thickness SiC slicing wafer manufacturer and supplier HMT offer 4 inch unpolished SiC wafer which for SiC lapping and polishing machine testing application. No ...

Company: Homray Material Technology

100mm GaN on Sapphire Manufacturer GaN Epi Layer

11713.

100mm GaN on Sapphire Manufacturer GaN Epi Layer Open Details in New Window [Aug 25, 2025]

100mm GaN on Sapphire Manufacturer GaN Epi Layer HMT produces and supplies high-quality 100mm GaN on sapphire wafer for customers worldwide. 2inch and 4 inch free standing GaN wafer also available in HMT. A reliable ...

Company: Homray Material Technology

Sic Boule Manufacturer for Cold Split and Wire Saw Testing

11714.

Sic Boule Manufacturer for Cold Split and Wire Saw Testing Open Details in New Window [Aug 25, 2025]

SiC Boule Manufacturer for cold split and wire saw testing Homray Material Technology offer 6 inch SiC boule for cold split and wisre saw testing for domestic and foreign customers with very competitive price. Our ...

Company: Homray Material Technology

GaN-on-Si for RF Hemt Manufacturer and Supplier Price

11715.

GaN-on-Si for RF Hemt Manufacturer and Supplier Price Open Details in New Window [Aug 22, 2025]

GaN-on-Si for RF HEMT Manufacturer and supplier price Homray Material Technology produces and supplies GaN-on-Silicon epi wafer with 4 inch,6 inch and 8 inch for power device.The products have extremely high ...

Company: Homray Material Technology