Jiangsu Profile
Product List
23521. 2301 P Channel Power Mosfets 
[Aug 19, 2022]
[Aug 19, 2022] Product Description Professional Mosfet 2301 -20V 3A P-Channel Sot-23 Mosfet Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23522. Goford G15n10c 100V 15A to-252 Mosfet Transistor for Remote Control LED Dimmer [Aug 19, 2022]
[Aug 19, 2022] GOFORD G15N10C 100V 15A TO-252 MOSFET Transistor for Remote Control Led Dimmer General Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23523. Electronic Components Gt52n10d5 100V 48A Dfn Package Mosfet [Jun 23, 2022]
[Jun 23, 2022] Electronic Components GT52N10D5 100V 48A DFN Package Mosfet General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23524. Discrete Component Si4916dy Equivalent Transistor G16n03s 30V Mosfet [Jun 14, 2022]
[Jun 14, 2022] Discrete Component Si4916DY Equivalent Transistor G16N03S 30V Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23525. Goford G3401A Mosfet 30V 4.4A Sot-23 P Channel Mosfet for Mobile Charger [Aug 19, 2022]
[Aug 19, 2022] GOFORD G3401A MOSFET 30V 4.4A SOT-23 P Channel MOSFET for Mobile Charger General Description The G3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23526. New Original Mosfet Transistor SMD Package 45p40 40V 50A P Channel with to-252 Package [Aug 19, 2022]
[Aug 19, 2022] New Original MOSFET Transistor SMD Package 45P40 40V50A P Channel with TO-252 Package General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23527. Original New Mosfet Supplier 60V 20A Dfn Mosfet with RoHS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original New MOSFET Supplier 60V 20A DFN MOSFET with ROHS Certificate General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23528. Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package [Aug 19, 2022]
[Aug 19, 2022] Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23529. N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application [Aug 19, 2022]
[Aug 19, 2022] N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23530. Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter [Aug 19, 2022]
[Aug 19, 2022] AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23531. Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original factory directly N Channel 60V 6A sot-23-3l Package mosfet with SGS Certificate General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
23532. 13005D 4-Inch High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 251μ m×251μ m BVCEO 410V BVCBO 700V BVEBO 9V hFE 15-30 VCE(sat) 0.6V fT 5MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23533. 13007D 4-Inch High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 330μ m×330μ m BVCEO 410V BVCBO 700V BVEBO 9V hFE 15-30 VCE(sat) 0.6V fT 5MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23534. 9015SSS 5-Inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 260μ m×260μ m BVCEO -50V BVCBO -70V BVEBO -8V hFE 60-600 VCE(sat) -0.3V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
23535. 9014s 5inch High Frequency Small Signal Transistor Chip Silicon Wafer [Dec 11, 2020]
[Dec 11, 2020] Die Size 300μ m×300μ m BVCEO 50V BVCBO 80V BVEBO 8V hFE 60-700 VCE(sat) 0.3V fT 150MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
