Jiangsu Profile
Product List
43981. Factory Directly 20V Dfn2*2-6L Package Mosfet as Alternative of Fdma410nz 
[Jun 10, 2022]
[Jun 10, 2022] Factory Directly 20V Dfn2*2-6L Package MOSFET as Alternative of Fdma410nz General Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43982. Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A [Jun 10, 2022]
[Jun 10, 2022] Fast Delivery Stock Mosfet Field Effect Transistor 30V 50A General Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43983. Ao3442 Equivalent Transistor Mosfet 1002L 100V 2A Sot-23-3 [Jun 10, 2022]
[Jun 10, 2022] AO3442 Equivalent Transistor MOSFET 1002L 100V 2A SOT-23-3 General Description The 1002L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43984. Active Components N-Channel Mosfet 60V Transistor G110n06 [Jun 10, 2022]
[Jun 10, 2022] Active Components N-Channel MOSFET 60V Transistor G110N06 General Description The G110N06uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43985. Mosfet Ao4455 Equivalent Transistor G16p03s P Mosfet -30V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Mosfet AO4455 Equivalent Transistor G16P03S P Mosfet -30V SOP-8 General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43986. Sira52dp Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter [Jun 10, 2022]
[Jun 10, 2022] SIRA52DP Equivalent Transistor Mosfet of SMD Package 60V 53A Parameter General Description The GT55N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43987. Discrete Component Irf7413z Equivalent Transistor G16n03s N Channel 30V 16A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Discrete Component IRF7413Z Equivalent Transistor G16N03S N Channel 30V 16A Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43988. Mosfet Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes [Jun 10, 2022]
[Jun 10, 2022] MOSFET Manufacturer G2014 20V 14A SMD Mosfet for Electronic Cigarettes General Description The G2014 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43989. Si4931dy Substitute G11s Mosfet Transistor P Channel 12V Sop-8 [Jun 10, 2022]
[Jun 10, 2022] Si4931DY Substitute G11S Mosfet Transistor P Channel 12V SOP-8 General Description The G11S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43990. LED Power Supply Application 60n04 40V 60A To252 N Mosfet [Jun 10, 2022]
[Jun 10, 2022] LED Power Supply Application 60N04 40V 60A TO252 N MOSFET General Description The 60N04 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43991. Irf640fp Replacement 200V 18A to-220f Mosfet Transistor for UPS [Jun 10, 2022]
[Jun 10, 2022] IRF640FP Replacement 200V 18A TO-220F MOSFET Transistor for UPS General Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43992. ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd [Jun 10, 2022]
[Jun 10, 2022] ISO9001 Approved 30V 48A Dfn Package N Channel Mosfet for Pd General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43993. Discrete Component 2301 P Channel 20V 3A Mosfet for PWM Application [Jun 10, 2022]
[Jun 10, 2022] AO3402 Substitute G2304 30V 3.6A MOSFET Transistor with SOT-23 Package General Description The 2301 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43994. Factory Directly N-Channel Dfn Package 60V 95A Mosfet [Jun 10, 2022]
[Jun 10, 2022] Factory Directly N-Channel Dfn Package 60V 95A Mosfet General Description The GT025N06D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
43995. Si6423dq Equivalent Transistor G08p02ts P Mosfet of 20V 8.2A [Jun 10, 2022]
[Jun 10, 2022] Si6423DQ Equivalent Transistor G08P02TS P MOSFET of 20V 8.2A General Description The G08P02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as ...
Company: Wuxi Goford Semiconductor Co., Ltd.
