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2/4/6inch Gallium Arsenide GaAs Substrate

44581.

2/4/6inch Gallium Arsenide GaAs Substrate Open Details in New Window [Aug 23, 2024]

GaAs Wafer Typical Specifications: Orientation: <100> / <111> or Others Diameter: 2inch / 3inch / 4inch / 6inch Thickness: 350 / 625 ...

Company: Crymstal Material Co., Ltd

2inch Free-Standing GaN Substrate

44582.

2inch Free-Standing GaN Substrate Open Details in New Window [Aug 23, 2024]

Free-Standing GaN Substrate Typical Specifications: Orientation: C-Plane(0001)/A-Plane(11-20)/R-Plane(1-102)/M-Plane(10-10) Diameter: 2inch / 10&times;10 ...

Company: Crymstal Material Co., Ltd

Goford G3401A Mosfet 30V 4.4A Sot-23 P Channel Mosfet for Mobile Charger

44583.

Goford G3401A Mosfet 30V 4.4A Sot-23 P Channel Mosfet for Mobile Charger Open Details in New Window [Aug 19, 2022]

GOFORD G3401A MOSFET 30V 4.4A SOT-23 P Channel MOSFET for Mobile Charger General Description The G3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Electronic Component  -Triac BT131

44584.

Electronic Component -Triac BT131 Open Details in New Window [Aug 08, 2014]

Package: TO-92 Application: Mainly applying for converter circuits, dimmer circuits, tempering circuits, speed circuits, and control circuits of electric fans, washing machines, drinking water machines, microwave ...

Company: Yixing Huanzhou Micro-Electronics Co., Ltd.

Electronic Component  -Triac BT138

44585.

Electronic Component -Triac BT138 Open Details in New Window [Aug 08, 2014]

Package: TO-220; TO-220 Insulated Application: Mainly applying for converter circuits, electric tools switches, tempering circuits, speed circuits, and control circuits of washing machines, microwave ovens, air ...

Company: Yixing Huanzhou Micro-Electronics Co., Ltd.

Metal Oxide Semiconductor Kw10n60

44586.

Metal Oxide Semiconductor Kw10n60 Open Details in New Window [Aug 21, 2024]

MOSFET, Fast revovery diode, Schottky diode, SJ (mos), THYRISTORS and TRIACS.

Company: Wuxi Kevin Electric Technology Co., Ltd.

Darlington Transistor

44587.

Darlington Transistor Open Details in New Window [Aug 20, 2024]

Model: MJE11032/MJ10012/FHD100D/YZ23 Features: 1) BVCBO: E80 ~ 600V 2) BVCEO: E80 ~ 400V 3) PCM: 30 ~ 300W 4) ICM: 10 ~ 50A 5) hFE: E1000 6) VCES: D2.5V (IC=25A, IB=0.25A) 7) Material: Silicon Packing: ...

Company: Qidong Jilai Electronics Co., Ltd.

New Original Mosfet Transistor SMD Package 45p40 40V 50A P Channel with to-252 Package

44588.

New Original Mosfet Transistor SMD Package 45p40 40V 50A P Channel with to-252 Package Open Details in New Window [Aug 19, 2022]

New Original MOSFET Transistor SMD Package 45P40 40V50A P Channel with TO-252 Package General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Original New Mosfet Supplier 60V 20A Dfn Mosfet with RoHS Certificate

44589.

Original New Mosfet Supplier 60V 20A Dfn Mosfet with RoHS Certificate Open Details in New Window [Aug 19, 2022]

Original New MOSFET Supplier 60V 20A DFN MOSFET with ROHS Certificate General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package

44590.

Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package Open Details in New Window [Aug 19, 2022]

Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...

Company: Wuxi Goford Semiconductor Co., Ltd.

N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application

44591.

N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application Open Details in New Window [Aug 19, 2022]

N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter

44592.

Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter Open Details in New Window [Aug 19, 2022]

AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate

44593.

Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate Open Details in New Window [Aug 19, 2022]

Original factory directly N Channel 60V 6A sot-23-3l Package mosfet with SGS Certificate General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Switch Diodes

44594.

Switch Diodes Open Details in New Window [Aug 21, 2024]

TAK CHEONG TC1N4148/ TC1N4448/ TC1N914B Specification Features: _ Fast Switching Device (TRR <4.0 nS) _ DO-35 Package (JEDEC) _ Through-Hole Device Type Mounting _ Hermetically Sealed Glass _ Compression ...

Company: Suzhou Hossen Electronics Co., Ltd.

Switch Diodes

44595.

Switch Diodes Open Details in New Window [Aug 21, 2024]

TAK CHEONG TCLL4148/ TCLL4448/ TCLL914B Specification Features: _ Fast Switching Device (TRR <4.0 nS) _ LL-34 (Mini-MELF) Package _Surface Device Type Mounting _ Hermetically Sealed Glass _ Compression ...

Company: Suzhou Hossen Electronics Co., Ltd.