Jiangsu Profile
Famous Export Brand
Product List
44581. 2/4/6inch Gallium Arsenide GaAs Substrate 
[Aug 23, 2024]
[Aug 23, 2024] GaAs Wafer Typical Specifications: Orientation: <100> / <111> or Others Diameter: 2inch / 3inch / 4inch / 6inch Thickness: 350 / 625 ...
Company: Crymstal Material Co., Ltd
44582. 2inch Free-Standing GaN Substrate [Aug 23, 2024]
[Aug 23, 2024] Free-Standing GaN Substrate Typical Specifications: Orientation: C-Plane(0001)/A-Plane(11-20)/R-Plane(1-102)/M-Plane(10-10) Diameter: 2inch / 10×10 ...
Company: Crymstal Material Co., Ltd
44583. Goford G3401A Mosfet 30V 4.4A Sot-23 P Channel Mosfet for Mobile Charger [Aug 19, 2022]
[Aug 19, 2022] GOFORD G3401A MOSFET 30V 4.4A SOT-23 P Channel MOSFET for Mobile Charger General Description The G3401 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44584. Electronic Component -Triac BT131 [Aug 08, 2014]
[Aug 08, 2014] Package: TO-92 Application: Mainly applying for converter circuits, dimmer circuits, tempering circuits, speed circuits, and control circuits of electric fans, washing machines, drinking water machines, microwave ...
44585. Electronic Component -Triac BT138 [Aug 08, 2014]
[Aug 08, 2014] Package: TO-220; TO-220 Insulated Application: Mainly applying for converter circuits, electric tools switches, tempering circuits, speed circuits, and control circuits of washing machines, microwave ovens, air ...
44586. Metal Oxide Semiconductor Kw10n60 [Aug 21, 2024]
[Aug 21, 2024] MOSFET, Fast revovery diode, Schottky diode, SJ (mos), THYRISTORS and TRIACS.
44587. Darlington Transistor [Aug 20, 2024]
[Aug 20, 2024] Model: MJE11032/MJ10012/FHD100D/YZ23 Features: 1) BVCBO: E80 ~ 600V 2) BVCEO: E80 ~ 400V 3) PCM: 30 ~ 300W 4) ICM: 10 ~ 50A 5) hFE: E1000 6) VCES: D2.5V (IC=25A, IB=0.25A) 7) Material: Silicon Packing: ...
Company: Qidong Jilai Electronics Co., Ltd.
44588. New Original Mosfet Transistor SMD Package 45p40 40V 50A P Channel with to-252 Package [Aug 19, 2022]
[Aug 19, 2022] New Original MOSFET Transistor SMD Package 45P40 40V50A P Channel with TO-252 Package General Description The 45P40 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44589. Original New Mosfet Supplier 60V 20A Dfn Mosfet with RoHS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original New MOSFET Supplier 60V 20A DFN MOSFET with ROHS Certificate General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44590. Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package [Aug 19, 2022]
[Aug 19, 2022] Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44591. N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application [Aug 19, 2022]
[Aug 19, 2022] N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44592. Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter [Aug 19, 2022]
[Aug 19, 2022] AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44593. Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original factory directly N Channel 60V 6A sot-23-3l Package mosfet with SGS Certificate General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
44594. Switch Diodes [Aug 21, 2024]
[Aug 21, 2024] TAK CHEONG TC1N4148/ TC1N4448/ TC1N914B Specification Features: _ Fast Switching Device (TRR <4.0 nS) _ DO-35 Package (JEDEC) _ Through-Hole Device Type Mounting _ Hermetically Sealed Glass _ Compression ...
Company: Suzhou Hossen Electronics Co., Ltd.
44595. Switch Diodes [Aug 21, 2024]
[Aug 21, 2024] TAK CHEONG TCLL4148/ TCLL4448/ TCLL914B Specification Features: _ Fast Switching Device (TRR <4.0 nS) _ LL-34 (Mini-MELF) Package _Surface Device Type Mounting _ Hermetically Sealed Glass _ Compression ...
Company: Suzhou Hossen Electronics Co., Ltd.
