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G30n03A 30V 30A N Mosfet for Pd

44836.

G30n03A 30V 30A N Mosfet for Pd Open Details in New Window [Aug 19, 2022]

Product Description G30N03A 30V 30A N Mosfet for Pd Part Number G30N03A VDSS 30V ID 30A RDS 9.2mΩ @ vgs=4.5V Vth 1.5V Package DFN3*3 Ciss 1490 pF Crss 135 pF Datasheet You may ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Gt45n06 Goford Mosfet 60V 45A Dfn Package

44837.

Gt45n06 Goford Mosfet 60V 45A Dfn Package Open Details in New Window [Aug 19, 2022]

Product Description Gt45n06 Goford Mosfet 60V 45A Dfn Package Part Number GT45N06 VDSS 60V ID 45A RDS 6.8mΩ @ vgs=10V Vth 1.7V Package DFN3*3 Ciss 1988 pF Crss 14 pF Datasheet You may ...

Company: Wuxi Goford Semiconductor Co., Ltd.

G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger

44838.

G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger Open Details in New Window [Aug 19, 2022]

Product Description G12p03A 30V 12A Dfn3X3 Transistor Mosfet for Fast Charger Part Number G12P03A VDSS -30V ID -12A RDS 19 mΩ @ vgs=4.5V Vth -1.6V Package DFN3*3 Ciss 1800 pF Crss 216 pF ...

Company: Wuxi Goford Semiconductor Co., Ltd.

P Type Mosfet 2301h -30V -2A Sot-23 Power Transistor Shenzhen Supplier

44839.

P Type Mosfet 2301h -30V -2A Sot-23 Power Transistor Shenzhen Supplier Open Details in New Window [Aug 19, 2022]

P Type Mosfet 2301H -30V -2A SOT-23 Power Transistor Shenzhen Supplier General Description The 2301H uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Transistor

44840.

Ao4407 Substitute Mosfet G16p03s P-CH 30V 16A Transistor Open Details in New Window [Aug 19, 2022]

AO4407 Substitute MOSFET G16P03S P-CH 30V 16A Transistor General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Fqp50n06 Alternative Mosfet 50n06 60V 50A Mosfet to-220 Transistor

44841.

Fqp50n06 Alternative Mosfet 50n06 60V 50A Mosfet to-220 Transistor Open Details in New Window [Aug 19, 2022]

FQP50N06 Alternative Mosfet 50N06 60V 50A Mosfet TO-220 Transistor General Description The 50N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Pd Application Mosfet Gt52n10d5 48A 100V Dfn5X6-8 Mosfet

44842.

Pd Application Mosfet Gt52n10d5 48A 100V Dfn5X6-8 Mosfet Open Details in New Window [Aug 19, 2022]

PD Application MOSFET GT52N10D5 48A 100V DFN5X6-8 Mosfet General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Fdms4d0n12c Substitute Mosfet Gt52n10d5 Dfn5*6 Package 100V 48A for PV Inverter

44843.

Fdms4d0n12c Substitute Mosfet Gt52n10d5 Dfn5*6 Package 100V 48A for PV Inverter Open Details in New Window [Aug 19, 2022]

FDMS4D0N12C Substitute Mosfet GT52N10D5 DFN5*6 Package 100V 48A for PV Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Tk25A10K3 Substitute Mosfet Gt52n10d5 100V 48A for Inverter

44844.

Tk25A10K3 Substitute Mosfet Gt52n10d5 100V 48A for Inverter Open Details in New Window [Aug 19, 2022]

Tk25A10K3 Substitute Mosfet Gt52n10d5 100V 48A for Inverter General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Goford G150n03t Mosfet 30V 150A N Channel to-220 Package Mosfet

44845.

Goford G150n03t Mosfet 30V 150A N Channel to-220 Package Mosfet Open Details in New Window [Aug 19, 2022]

GOFORD G150N03T MOSFET 30V 150A N Channel TO-220 Package MOSFET General Description The G150N03T uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use ...

Company: Wuxi Goford Semiconductor Co., Ltd.

China Factory Mosfet 120A 40V N Channel to-220 Mosfet for UPS

44846.

China Factory Mosfet 120A 40V N Channel to-220 Mosfet for UPS Open Details in New Window [Aug 19, 2022]

China Factory MOSFET 120A 40V N Channel TO-220 MOSFET for UPS General Description The G120N04A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as ...

Company: Wuxi Goford Semiconductor Co., Ltd.

2301 P Channel Power Mosfets

44847.

2301 P Channel Power Mosfets Open Details in New Window [Aug 19, 2022]

Product Description Professional Mosfet 2301 -20V 3A P-Channel Sot-23 Mosfet Part Number 2301 VDSS -20V ID -3A RDS 48mΩ @ vgs=4.5V Vth -0.7V Package SOT-23 Ciss 405 pF Crss 55 pF ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Goford G15n10c 100V 15A to-252 Mosfet Transistor for Remote Control LED Dimmer

44848.

Goford G15n10c 100V 15A to-252 Mosfet Transistor for Remote Control LED Dimmer Open Details in New Window [Aug 19, 2022]

GOFORD G15N10C 100V 15A TO-252 MOSFET Transistor for Remote Control Led Dimmer General Description The G15N10C uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Electronic Components Gt52n10d5 100V 48A Dfn Package Mosfet

44849.

Electronic Components Gt52n10d5 100V 48A Dfn Package Mosfet Open Details in New Window [Jun 23, 2022]

Electronic Components GT52N10D5 100V 48A DFN Package Mosfet General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...

Company: Wuxi Goford Semiconductor Co., Ltd.

Discrete Component Si4916dy Equivalent Transistor G16n03s 30V Mosfet

44850.

Discrete Component Si4916dy Equivalent Transistor G16n03s 30V Mosfet Open Details in New Window [Jun 14, 2022]

Discrete Component Si4916DY Equivalent Transistor G16N03S 30V Mosfet General Description The G16N03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for ...

Company: Wuxi Goford Semiconductor Co., Ltd.