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High Current Welding Rectifier Diode Replace ABB 5SDD71X0200, 5SDD71B0200

12001.

High Current Welding Rectifier Diode Replace ABB 5SDD71X0200, 5SDD71B0200 Open Details in New Window [Aug 23, 2024]

ZP7100A-200V, ZP7100A-400V, ZP9200A-200V, ZP9200A-400V, ZP10500A-200V, ZP10500-400V, ZP12000A-200V, ZP12000A-400V, ZP13500A-200V, ZP13500A-400V, ZP16000A-200V, ZP18000A-200V Y5SDD71X0200, Y5SDD71X0400, Y5SDD71B0200, ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

High Current Welding Rectifier Diode, Welding Machine Diode, Welding Diodes

12002.

High Current Welding Rectifier Diode, Welding Machine Diode, Welding Diodes Open Details in New Window [Aug 23, 2024]

ZP7100A-200V, ZP7100A-400V, ZP9200A-200V, ZP9200A-400V, ZP10500A-200V, ZP10500-400V, ZP12000A-200V, ZP12000A-400V, ZP13500A-200V, ZP13500A-400V, ZP16000A-200V, ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

Zp12000A Welding Diodes for Medium Frequency Resistance Welding Replace Y5sdd0120c0200

12003.

Zp12000A Welding Diodes for Medium Frequency Resistance Welding Replace Y5sdd0120c0200 Open Details in New Window [Aug 23, 2024]

ZP7100A-200V, ZP7100A-400V, ZP9200A-200V, ZP9200A-400V, ZP10500A-200V, ZP10500-400V, ZP12000A-200V, ZP12000A-400V, ZP13500A-200v, ZP13500A-400V, ZP16000A-200V, ZP18000A-200V Y5SDD71X0200, Y5SDD71X0400, Y5SDD71B0200, ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

4inch Sapphire GaN Templates Supplier Compound GaN Wafer Manufacturer

12004.

4inch Sapphire GaN Templates Supplier Compound GaN Wafer Manufacturer Open Details in New Window [Feb 09, 2026]

4inch Sapphire GaN Templates Supplier Compound GaN Wafer Manufacturer Homray Material Technology has established the manufacturing technology for free-standing Gallium Nitride wafer GaN substrate which is for UHB-LED ...

Company: Homray Material Technology

Midas S1-T-006, Midas-T-006g, Honeywell, Midas-T-006

12005.

Midas S1-T-006, Midas-T-006g, Honeywell, Midas-T-006 Open Details in New Window [Feb 27, 2026]

HONEYWELL MIDAS-E-SHX HONEYWELL MIDAS-E-NH3 Honeywell MIDAS-E-HCL HONEYWELL MIDAS-E-SHX HONEYWELL MIDAS-E-SHX HONEYWELL MIDAS-E-NH3 HONEYWELL MIDAS S1-T-006 Honeywell MIDAS-T-NP1 Honeywell MIDAS-E-HAL Honeywell ...

Company: Yuan Wei International Trade Wuxi Co. Ltd

6 Inch Sic Wafer Substrate 4h-N Type

12006.

6 Inch Sic Wafer Substrate 4h-N Type Open Details in New Window [Nov 05, 2024]

Item 4H n-type SiC ...

Company: Jxt Technology Co., Ltd.

8 Inch Sic Wafer Substrate 4h-N Type

12007.

8 Inch Sic Wafer Substrate 4h-N Type Open Details in New Window [Nov 05, 2024]

Item 4H n-type SiC ...

Company: Jxt Technology Co., Ltd.

Disc Type Fast Recovery Rectifier Diode

12008.

Disc Type Fast Recovery Rectifier Diode Open Details in New Window [Aug 23, 2024]

***Our main business *** 1)thyristor and diode chips 2)thyristor: Phase control thyristor(kp), fast switching thyristor(kk), Bi-directional Triode Thyristor(TRIAC). 3)diode: Rectifier diode(zp), fast recovery ...

Company: Runau Electronics(Yangzhou) Manufacturing Co., Ltd

4h-Hpsi Sic Substrate Wafer Manufacturer 4 Inch Un Doped Sic Wafer

12009.

4h-Hpsi Sic Substrate Wafer Manufacturer 4 Inch Un Doped Sic Wafer Open Details in New Window [Feb 09, 2026]

4H-HPSI SiC Substrate Wafer Manufacturer 4 inch Un doped SiC wafer Homray Material Technology offers the best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products ...

Company: Homray Material Technology

2 Inch Free Standing GaN Wafer Manufacturer Si Doped

12010.

2 Inch Free Standing GaN Wafer Manufacturer Si Doped Open Details in New Window [Feb 09, 2026]

2 inch free standing GaN wafer manufacturer Si doped GaN substrate wafer supplier and manufacturer HMT usually supply un-doped free-standing GaN subsrate wafer both for 2 inch and 4inch. Double side polished and ...

Company: Homray Material Technology

4h-Si 500 to 600um Sic Wafer Manufacturer

12011.

4h-Si 500 to 600um Sic Wafer Manufacturer Open Details in New Window [Feb 09, 2026]

4H-SI 500 to 600um SiC Wafer Manufacturer Homray Material Technology provide 500um to 600um thickness SiC Wafers. These wafers we called As-cut SiC wafer which means unlapping and unpolished. Domestic and foreign ...

Company: Homray Material Technology

4 Inch GaN Substrate Wafer Manufacturer Un-Doped

12012.

4 Inch GaN Substrate Wafer Manufacturer Un-Doped Open Details in New Window [Feb 09, 2026]

4 inch GaN Substrate wafer Manufacturer un-doped 100mm (4 inch) GaN substrate wafer in stock from GaN wafer manufacturer and supplier of HMT. we offer both un-doped N type and si-doped N type GaN wafer. The bottom ...

Company: Homray Material Technology

GaN/Si Epitaxy Wafer Manufacturer Service on 8 Inch for GaN on Si

12014.

GaN/Si Epitaxy Wafer Manufacturer Service on 8 Inch for GaN on Si Open Details in New Window [Feb 09, 2026]

GaN/Si Epitaxy Wafer Manufacturer Service on 8 inch for GaN on Si Gallium Nitride (GaN) epitaxial wafers (epi-wafers) manufacturer Homray Material Technology offer 8 inch GaN-on-Si Epi wafer for domestic and foreign ...

Company: Homray Material Technology

4 Inch Gallium Nitride N Type GaN Substrate Manufacturer Ssp

12015.

4 Inch Gallium Nitride N Type GaN Substrate Manufacturer Ssp Open Details in New Window [Feb 09, 2026]

4 inch Gallium Nitride N type GaN Substrate Manufacturer SSP HMT is a leading manufacturer and supplier of GaN wafer, we can offer single side polished 4 inch sapphire GaN wafer with favourable price at the ...

Company: Homray Material Technology