Jiangsu Profile

Product List
451. 10A 600V N-Channel Enhancement Mode Power Mosfet F10n60 to-220f
[Apr 08, 2025]

PARAMETER SYMBOL VALUE UNIT 10N60/I10N60/E10N60 F10N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
452. 16A 400V Fast Recovery Diode Mur1640CT to-220
[Apr 08, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
453. 40A 600V Fast Recovery Diode Mur4060bct to-247
[May 17, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
454. 90A 400V Fast Recovery Diode Mur9040DCT to-3p
[Apr 08, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
455. Mur1560 to-220-2L 15A 600V Fast Recovery Diode
[Apr 01, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
456. Insulated Gate Bipolar Transistor IGBT G70n65D to-247
[Apr 01, 2025]

PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 140 A Collector Current (Tc=100ºC) 70 A Pulsed ...
457. 30A 600V Fast Recovery Diode Mur3060 to-220-2L
[Mar 24, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
458. 30A 200V Schottky Barrier Diode Hmbr30200CT to-220
[Mar 24, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Applications converters free-wheeling diodes reverse battery protection Typical applications are ...
459. 80A 60V N-Channel Enhancement Mode Power Mosfet Dhs095n06D to-252
[Mar 24, 2025]

PARAMETER SYMBOL VALUE UNIT DHS095N06/DHS095N06I/DHS095N06E/DHS095N06B/DHS095N06D DHS095N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
460. 20A 900V N-Channel Enhancement Mode Power Mosfet 20n90d to-3pn
[Mar 24, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 900 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13.2 A Drain ...
461. 45A 300V Fast Recovery Diode Mur4540DCT to-3p
[Mar 24, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
462. 700V 10A N-Channel Enhancement Mode Power Mosfet F10n70 to-220f
[Mar 24, 2025]

PARAMETER SYMBOL VALUE UNIT 10N70/I10N70/E10N70 F10N70 Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
463. Dh020n03, to-220, 200A 30V N-Channel Enhancement Mode Power Mosfet
[Mar 24, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 200 A BVGSS ±20 V VTH 1 2 V EAS - - 900 mJ Ptot - - 278 W Rdson 2.0 - 2.5 mΩ Features Fast ...
464. 30A 1200V Fast Recovery Diode Mur30120 to-220f-2L
[Feb 27, 2025]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
465. 20A 45V Schottky Barrier Diode Mbr2045CT to-220
[Feb 27, 2025]

Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
