Jiangsu Profile
Product List
601. 1200V 75A IGBT Module Dgc75c120m2t 
[Jun 24, 2024]
[Jun 24, 2024] 75A 1200V 6 in one-package 1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which ...
602. Kbpc 3510 35A 1000V Bridge Rectifier [Jan 11, 2025]
[Jan 11, 2025] KBPC3510 HIGH CURRENT SINGLE-PHASE SILICON BRIDGE RECTIFIER REVERSE VOLTAGE: FORWARD CURRENT: FEATURES Electrically Isolated Metal Case for Maximum Heat Dissipation Surge Overload Ratings to 400 Amperes ...
603. 50A 40V N-Channel Enhancement Mode Power Mosfet D50n04 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
604. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
605. 85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...
606. 30A 100V Low Schottky Barrier Diode Mbr30r100CT to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL RATING VBR (V) Min 100 typ 121 IR(uA)25ºC max 50 VF (V) 25ºC typ. 0.68 max 0.73 IF(A) Single chip package 15.0 IF(A) Dual chip package 30.0 Features High junction temperature ...
607. 20A 400V Fast Recovery Diode Mur2040 to-220-2L [Jun 24, 2024]
[Jun 24, 2024] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
608. Three-Terminal Negative Voltage Regulator IC L7905CV to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT DC Intput Voltage VO=-5V~-15V VI -35 V Output Current IO Internally Limited V Thermal resistance junction-air RθJA 65 ºC/W Thermal resistance ...
609. 80A 68V N-Channel Enhancement Mode Power Mosfet Dh072n07 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH072N07/DH072N07I/DH072N07E/ DH072N07B/DH072N07D DH072N07F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
610. 70A 82V N-Channel Enhancement Mode Power Mosfet Dh8290 to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH8290/DHI8290/DHE8290/DHB8290/DHD8290 DHF8290 Drian-to-Source Voltage VDSS 82 V Gate-to-Source Voltage VGSS ±25 V Drain ...
611. 100A 68V N-Channel Enhancement Mode Power Mosfet Dh3205A to-220 **%off [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH3205A/DHI3205A/DHE3205A/DHB3205A/DHD3205A DHF3205A Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
612. 120A 60V N-Channel Enhancement Mode Power Mosfet D3205 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT D3205/ID3205/ED3205 FD3205 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...
613. 120A 100V N-Channel Enhancement Mode Power Mosfet Dh10h037r to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH10H037R/DHI10H037R/DHE10H037R DHF10H037R Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
614. 20A 100V P-Channel Enhancement Mode Power Mosfet Dh100p20b to-251 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100P20/DH100P20I/DH100P20E/DH100P20B/DH100P20D DH100P20F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
615. 10A 100V Low Schottky Barrier Diode Mbr10r100CT to-220 [Jun 24, 2024]
[Jun 24, 2024] Features High junction temperature capabiliy Low leakage current Low thermal resistance High frequency operation Avalanche specification Applications Switching Power Supply Power Switching Circuits General ...
