Jiangsu Profile

Product List
22156. Electronic Components 3400 40V 50A Sot-23 Power Transistor
[Aug 19, 2022]

Electronic Components 3400 40V 50A SOT-23 Power Transistor General Description The 3400 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22157. Goford G65p06K Std35p6llf6 Alternative 60V P Channel Mosfet with to-252 Package
[Aug 19, 2022]

GOFORD G65P06K STD35P6LLF6 Alternative 60V P Channel MOSFET with TO-252 Package General Description The G65P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22158. Factory Directly Transistor Supplier 190V 3A Sot-23-3 Mosfet for LED Dirver
[Aug 19, 2022]

Factory Directly Transistor Supplier 190V 3A SOT-23-3 MOSFET for LED Dirver General Description The G2003A uses advanced trench technology to achieve extremely low on-resistance. And fast switching speed and ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22159. IC Supply Chain Aod409 Alternative 25p06 P-Channel Mosfet -60V -25A
[Aug 19, 2022]

IC Supply Chain AOD409 Alternative 25P06 P-Channel MOSFET -60V -25A General Description The 25P06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22160. Enhancement Power Transistor 30V 100A N-Channel to-252 SMD Mosfet Manufacturer
[Aug 19, 2022]

Enhancement Power Transistor 100N03 30V 100A N-Channel TO-252 SMD Mosfet Manufacturer General Description The 100N03 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22161. Mosfet G50n03K 30V 65A Dpak Field Effect Transistor
[Aug 19, 2022]

MOSFET G50N03K 30V 65A DPAK Field Effect Transistor General Description The G50N03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22162. Low Power Mosfet 1002 100V 2A Sot-23 N Channel Mosfet
[Aug 19, 2022]

Low Power Mosfet 1002 100V 2A SOT-23 N Channel Mosfet General Description The 1002 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22163. Power Mosfet 600V 4A to-252 Package Power Transistor for LED Lighting
[Aug 19, 2022]

Power Mosfet 600V 4A TO-252 Package Power Transistor for LED Lighting General Description The 4N60A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22164. RoHS Compliant G16p03s P Channel 30V 16A Mosfet for Pd
[Aug 19, 2022]

ROHS Compliant G16P03S P Channel 30V 16A Mosfet for PD General Description The G16P03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22165. Tk25A10K3 Replacement Transistor Gt52n10d5 100V Mosfet N Channel for Solar Panel Smart Module
[Jun 23, 2022]

TK25A10K3 Replacement Transistor GT52N10D5 100V Mosfet N Channel for Solar Panel Smart Module General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22166. Aon6298 Substitute Mosfet Gt45n10 100V 45A Dfn5*6 Package New Original 8 Pin SMD Mosfet
[Jun 14, 2022]

AON6298 Substitute MOSFET GT45N10 100V 45A DFN5*6 Package New Original 8 Pin SMD Mosfet General Description The GT45N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22167. Fdma410nz Equivalent Transistor G2012 Mosfet of 20V Dfn2*2-6L Package
[Jun 14, 2022]

FDMA410NZ Equivalent Transistor G2012 MOSFET of 20V DFN2*2-6L Package General Description The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22168. Dmp2008ufg-7 Substitute Mosfet G45p02D3 19V 45A Dfn3X3 P Channel Mosfet
[Jun 10, 2022]

DMP2008UFG-7 Substitute MOSFET G45P02D3 19V 45A DFN3X3 P Channel MOSFET General Description The G45P02D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22169. Electronic Components 30V 8A Dfn Package Mosfet for Electronic Cigarette
[Jun 10, 2022]

Electronic Components 30V 8A DFN Package MOSFET for Electronic Cigarette General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22170. Discrete Components G08n03D2 Mosfet 30V 8A of Dfn2X2 Package
[Jun 10, 2022]

Discrete Components G08N03D2 MOSFET 30V 8A of DFN2X2 Package General Description The G08N03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety ...
Company: Wuxi Goford Semiconductor Co., Ltd.
