Jiangsu Profile
Product List
22276. 2222A 5-Inch Fast Switching Transistor Chips/Silicon Wafer 
[Dec 09, 2020]
[Dec 09, 2020] Die Size 0.46mm×0.46mm BVCEO 40V BVCBO 75V BVEBO 6V IC 0.6A hFE 100~300 VCE(sat) 1V fT 250MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22277. Bc807 5-Inch High Frequency Small Signal Transistor Chips/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.53mm×0.53mm BVCEO -500V BVCBO -45V BVEBO -6V IC -0.5A hFE 125~600 VCE(sat) -0.65V fT 100MHz Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national ...
22278. Jcr0125b 4-Inch SCR Thyristor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.25mm×1.25mm Application Switcher,Motor Controller, Power Control VDRM 600V VRRM 600V IT 1.5A ITSM 15A IGT(MAX.) 120μA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a ...
22279. Jcr0110b 4-Inch SCR Thyristor Chip/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1.10mm×1.10mm Application Switcher,Motor Controller, Power Control VDRM 600V VRRM 600V IT 1A ITSM 10A IGT(MAX.) 120μA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a ...
22280. Jcr0092b 4-Inch SCR Thyristor Chip/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.92mm×0.92mm Application Switcher,Motor Controller, Power Control VDRM 600V VRRM 600V IT 0.8A ITSM 8A IGT(MAX.) 120μA VTM 1.7V Yangzhou Genesis Microelectronics Co., Ltd., a ...
22281. Bj162 4-Inch Diode Wafer Bj162 Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1620μ m×1620μ m Known Good Dies 2800 P(W) 35 I(A) 3.2 BCEO/BCEO/BEBO(V) 220/350/7 hFE 10-40 fT(MHz) 5 Metallization Front: Al Back: Ag Yangzhou Genesis Microelectronics Co., ...
22282. 11005s 4-Inch NPN High-Voltage Switching Transistor Chip/Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1800μ m×1800μ m Size of Bonding Pad Base 296μ m×540μ m Emitter 300×700µm2 Thickness 240±10μm Scribe Width 40μm Metallization Front: Al Back: ...
22283. P2.0 4-Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 2000μ m×2000μ m Size of Bonding Pad Base 430μ m×620μ m Emitter 430μ m×620μ m Thickness 270±20μm Scribe Width 80μm Metallization Front: Al ...
22284. N1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
22285. P1.4 4 Inch Power Transistor Chips/Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1400μ m×1400μ m Size of Bonding Pad Base 429μ m×615μ m Emitter 424μ m×550μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
22286. Jcr0044p (SN) Thyristor Element Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 440μ m×440μ m Size of Bonding Pad Controlling 115μ m×115μ m Cathode: 190×190×3/4µm2 Thickness 220±20μm Known Good Dies 36300 Metallization ...
22287. Jcr0150b 4-Inch SCR Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1500μ m×1500μ m Size of Bonding Pad Controlling 260μ m×260μ m Cathode: 920×920×3/4µm2 Thickness 220±20μm Scribe Width 90μm Metallization ...
22288. P1.8 4-Inch Power Transistor Chips Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 1780μ m×1780μ m Size of Bonding Pad Base 495μ m×495μ m Emitter 495μ m×495μ m Thickness 240±10μm Scribe Width 80μm Metallization Front: Al ...
22289. 13009 4-Inch NPN High-Voltage Switching Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 4.3mm×4.3mm Size of Bonding Pad Base 690*1000μm2 Emitter 825*1200μm2 Thickness 240±10μm Scribe Width 60μm Metallization Front: Al 4.3±0.3μm Front: Al ...
22290. Bc817 High Frequency Small Signal Transistor Diced Silicon Wafer [Dec 09, 2020]
[Dec 09, 2020] Die Size 0.49mm×0.49mm BVCEO 45V IC 500A BVCBO/BVEBO 50V/6V hFE Min.:125 Max:600 Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was ...
