Jiangsu Profile
Product List
22231. Electronic Component Mosfet Transistor 20p10 P-Channel 100V 20A to-220 Package 
[Aug 19, 2022]
[Aug 19, 2022] Electronic Component Mosfet Transistor 20P10 P-channel 100V 20A TO-220 Package General Description The 20P10 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22232. N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application [Aug 19, 2022]
[Aug 19, 2022] N Channel 100V 48A Dfn5*6 Mosfet Gt52n10 (TPH4R50ANH) for Motor Driver Application General Description The GT52N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22233. Ao6294 Equivalent Mosfet Transistor Gt52n10d5 100V 48A Dfn5*6 Package for Inverter [Aug 19, 2022]
[Aug 19, 2022] AO6294 Equivalent Mosfet Transistor GT52N10D5 100V 48A DFN5*6 Package for Inverter General Description The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22234. Original Factory Directly N Channel 60V 6A Sot-23-3L Package Mosfet with SGS Certificate [Aug 19, 2022]
[Aug 19, 2022] Original factory directly N Channel 60V 6A sot-23-3l Package mosfet with SGS Certificate General Description The 06N06L uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
22235. Battery Pack Fuse with Low Power Loss for Ess Application 1500VDC 800A [May 08, 2024]
[May 08, 2024] This series of DC fuses are small in size, light in weight, high-precision resistance value,It can be flexibly used in parallel in the loop to form a wider current level. With low power consumption, high breaking ...
Company: Hudson Electric (Wuxi) Co., Ltd.
22236. Y70kpe0t22K Silicon Controlled Rectifier Brand New and Original [Dec 02, 2022]
[Dec 02, 2022] Dear old and new customers, you are welcome to visit our store. If there are any product details that are not detailed enough, I sincerely hope you can purchase them with me, and I will explain them to you one by one. ...
Company: Kunshan Qunhao Electric Co., Ltd.
22237. S30p40alx 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.76mm×0.76mm IF 1000mA VR 40V IR 10μA VF1 0.56V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22238. S28n60aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 60V VF1 0.66V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22239. S28n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 40V VF1 0.55V IR 50μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22240. S28n20aly5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.71mm×0.71mm IF 1000mA VR 20V VF1 0.45V IR 100μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22241. S24n40aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 40V VF1 0.6V IR 500μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22242. S24n20aly 5-Inch Small-Signal Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.61mm×0.61mm IF 750mA VR 20V VF1 0.47V IR 200μA Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22243. S68h60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.73mm×1.73mm IF 5A VR 60V IR 3μA VF 0.71V Tj 175ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22244. S26n20ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 1.14mm×1.14mm IF 2A VR 60V IR 25μA VF 0.63V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
22245. S35n60ayy 5-Inch Power Schottky Barrier Diode Chip/Silicon Wafer [Dec 10, 2020]
[Dec 10, 2020] Die Size 0.89mm×0.89mm IF 2A VR 60V IR 100μA VF 0.68V Tj 125ºC Wafer Size 5 inches Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech ...
