Jiangsu Profile

Product List
28486. G16p03s-Mt P-Channel Mosfet -30V -16A Sop-8 Packaging for LED Application
[Aug 19, 2022]

Product Description G16P03S-MT -30V -16A SOP-8 packaging Mosfet (electronic components distributor) Part Number G16P03S-MT VDSS -30V ID -16A RDS 14mΩ @vgs=4.5V 9.9mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28487. Electrical Component G18p03s P-Channel Mosfet -30V -15A Sop-8 Packaging
[Aug 19, 2022]

Product Description G18P03S -30V -15A SOP-8 packaging Mosfet (electronic components distributor) Part Number G18P03S VDSS -30V ID -15A RDS 10.5mΩ @vgs=4.5V 8.1mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28488. 5p40 P-Channel Mosfet -40V -5.3A Sot-23-3L Packaging for LED Application
[Aug 19, 2022]

Product Description 5P40 -40V -5.3A SOT-23-3L packaging Mosfet (electronic components distributor) Part Number 5P40 VDSS -40V ID -5.3A RDS 98-126mΩ @vgs=4.5V 73-85mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28489. Electrical Component G65p06D5 P-Channel Mosfet -60V -60A Dfn5*6-8L Packaging
[Aug 19, 2022]

Product Description G65P06D5 -60V -60A DFN5*6-8L packaging Mosfet (electronic components distributor) Part Number G65O06D5 VDSS -60V ID -60A RDS 13mΩ @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28490. G7p03L -30V -7A Sot-23-L Packaging P-Channel Mosfet for Fast Charge Application
[Aug 19, 2022]

Product Description G7P03L -30V -7A SOT-23-3L packaging Mosfet (electronic components distributor) Part Number G7P03L VDSS -30V ID -7A RDS 23mΩ @vgs=4.5V 19mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28491. G07p03L -30V -7A Sot-23-L Packaging P-Channel Mosfet for Fast Charge Application
[Aug 19, 2022]

Product Description G07P03L -30V -7A SOT-23-3L packaging Mosfet (electronic components distributor) Part Number G07P03L VDSS -30V ID -7A RDS 26-34mΩ @vgs=4.5V 20.5-23mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28492. Mosfets Crosses 60V 53A
[Aug 19, 2022]

Product Description GT55N06 60V 53A DFN5*6 packaging Mosfet (electronic components distributor) Part Number GT55N06 VDSS 60V ID 53A RDS 6.8-8.2mΩ @vgs=10V Vth 1.7V Package DFN5*6 Ciss 1955 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28493. Mosfet 100V 2A Sot-23
[Aug 19, 2022]

Product Description 1002 100V 2A SOT-23 packaging Mosfet (electronic components distributor) Part Number 1002 VDSS 100V ID 2A RDS 180mΩ @vgs=10V Vth 2.0V Package SOT-23 Ciss 190 pF Crss 13 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28494. Gc20n65t 650V 20A Mosfets
[Feb 03, 2023]

Product Description GC20N65T 650V 20A For more products details, please contact us ! Packaging & Shipping 1. The order normally will be shipped within 3to7 working days upon the availability of the ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28495. Electrical Component 5n20A Mosfet 200V 5A to-252 Packaging
[Aug 19, 2022]

Product Description 5N20A 200V 5A TO-252 packaging Mosfet (electronic components distributor) Part Number 5N20A VDSS 200V ID 5A RDS 0.49-0.58Ω @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28496. 6 Inch Sic Wafer Substrate 4h-N Type
[Nov 05, 2024]

Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28497. 8 Inch Sic Wafer Substrate 4h-N Type
[Nov 05, 2024]

Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28498. 2 Inch Silicon Carbide Wafer (SiC Wafer) 4h-N-Type for Photovoltaic Radio Frequency Single Crystal ...
[Nov 05, 2024]

Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28499. 4 Inch Sic Wafer Substrate 4h-N Type
[Nov 05, 2024]

Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28500. 4 Inch GaN on Silicon Epitaxial Wafer
[Nov 05, 2024]

GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
