Jiangsu Profile
Product List
28531. Mosfet 100V 2A Sot-23 
[Aug 19, 2022]
[Aug 19, 2022] Product Description 1002 100V 2A SOT-23 packaging Mosfet (electronic components distributor) Part Number 1002 VDSS 100V ID 2A RDS 180mΩ @vgs=10V Vth 2.0V Package SOT-23 Ciss 190 pF Crss 13 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28532. Gc20n65t 650V 20A Mosfets [Feb 03, 2023]
[Feb 03, 2023] Product Description GC20N65T 650V 20A For more products details, please contact us ! Packaging & Shipping 1. The order normally will be shipped within 3to7 working days upon the availability of the ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28533. Electrical Component 5n20A Mosfet 200V 5A to-252 Packaging [Aug 19, 2022]
[Aug 19, 2022] Product Description 5N20A 200V 5A TO-252 packaging Mosfet (electronic components distributor) Part Number 5N20A VDSS 200V ID 5A RDS 0.49-0.58Ω @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28534. 6 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28535. 8 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28536. 2 Inch Silicon Carbide Wafer (SiC Wafer) 4h-N-Type for Photovoltaic Radio Frequency Single Crystal ... [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28537. 4 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28538. 4 Inch GaN on Silicon Epitaxial Wafer [Nov 05, 2024]
[Nov 05, 2024] GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
28539. 2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
28540. 2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
28541. 4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
28542. 2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped [Nov 05, 2024]
[Nov 05, 2024] GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
28543. 6 Inch Sapphire Substrate [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
28544. Daybright All-in-One Ess [Aug 23, 2024]
[Aug 23, 2024] Daybright ALL-IN-ONE ESS integrates energy storage system modules to support off-grid/grid-connected use and cloud monitoring.With the first-class LFP core and self-developed intelligent BMS battery management system, ...
28545. Dg2-VCR Ultra-High Purity Pressure Transmitter for Semiconductor Manufacturing, Ultra-High Purity ... [Jan 15, 2025]
[Jan 15, 2025] 
Product Parameters Model No. DG2-VCR Output Signal Type Direct current Production Process Micro Fusion Material 17-4PH/316L(VIM+VAM)/Hastelloy Thread Type 1/4VCR, Customized Wiring Type 1, Direct outlet 2, ...
Company: Shenzhen Maxonic Automation Control Co., Ltd Senex Branch
