Jiangsu Profile
Product List
28501. Electrical Component G65p06D5 P-Channel Mosfet -60V -60A Dfn5*6-8L Packaging 
[Aug 19, 2022]
[Aug 19, 2022] Product Description G65P06D5 -60V -60A DFN5*6-8L packaging Mosfet (electronic components distributor) Part Number G65O06D5 VDSS -60V ID -60A RDS 13mΩ @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28502. G7p03L -30V -7A Sot-23-L Packaging P-Channel Mosfet for Fast Charge Application [Aug 19, 2022]
[Aug 19, 2022] Product Description G7P03L -30V -7A SOT-23-3L packaging Mosfet (electronic components distributor) Part Number G7P03L VDSS -30V ID -7A RDS 23mΩ @vgs=4.5V 19mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28503. G07p03L -30V -7A Sot-23-L Packaging P-Channel Mosfet for Fast Charge Application [Aug 19, 2022]
[Aug 19, 2022] Product Description G07P03L -30V -7A SOT-23-3L packaging Mosfet (electronic components distributor) Part Number G07P03L VDSS -30V ID -7A RDS 26-34mΩ @vgs=4.5V 20.5-23mΩ ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28504. Mosfets Crosses 60V 53A [Aug 19, 2022]
[Aug 19, 2022] Product Description GT55N06 60V 53A DFN5*6 packaging Mosfet (electronic components distributor) Part Number GT55N06 VDSS 60V ID 53A RDS 6.8-8.2mΩ @vgs=10V Vth 1.7V Package DFN5*6 Ciss 1955 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28505. Mosfet 100V 2A Sot-23 [Aug 19, 2022]
[Aug 19, 2022] Product Description 1002 100V 2A SOT-23 packaging Mosfet (electronic components distributor) Part Number 1002 VDSS 100V ID 2A RDS 180mΩ @vgs=10V Vth 2.0V Package SOT-23 Ciss 190 pF Crss 13 ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28506. Gc20n65t 650V 20A Mosfets [Feb 03, 2023]
[Feb 03, 2023] Product Description GC20N65T 650V 20A For more products details, please contact us ! Packaging & Shipping 1. The order normally will be shipped within 3to7 working days upon the availability of the ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28507. Electrical Component 5n20A Mosfet 200V 5A to-252 Packaging [Aug 19, 2022]
[Aug 19, 2022] Product Description 5N20A 200V 5A TO-252 packaging Mosfet (electronic components distributor) Part Number 5N20A VDSS 200V ID 5A RDS 0.49-0.58Ω @vgs=10V ...
Company: Wuxi Goford Semiconductor Co., Ltd.
28508. 6 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28509. 8 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28510. 2 Inch Silicon Carbide Wafer (SiC Wafer) 4h-N-Type for Photovoltaic Radio Frequency Single Crystal ... [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28511. 4 Inch Sic Wafer Substrate 4h-N Type [Nov 05, 2024]
[Nov 05, 2024] Item 4H n-type SiC ...
Company: Jxt Technology Co., Ltd.
28512. 4 Inch GaN on Silicon Epitaxial Wafer [Nov 05, 2024]
[Nov 05, 2024] GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...
Company: Jxt Technology Co., Ltd.
28513. 2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
28514. 2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
28515. 4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate [Nov 05, 2024]
[Nov 05, 2024] SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...
Company: Jxt Technology Co., Ltd.
