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4inch (100mm) Sic Wafer Maker N-Type Great Price Support Customize

12076.

4inch (100mm) Sic Wafer Maker N-Type Great Price Support Customize Open Details in New Window [Feb 09, 2026]

4inch(100mm) SiC Wafer Maker HMT company produce 4 inch and 6 inch(150mm) Conductive N type SiC wafer with testing grade and production grade. We also support customize any thickness of SiC Wafers. No matter you need D ...

Company: Homray Material Technology

Best Price 4h-Sic Wafer Manufacturer (50.8mm-200mm) Diameter

12077.

Best Price 4h-Sic Wafer Manufacturer (50.8mm-200mm) Diameter Open Details in New Window [Feb 09, 2026]

Best Price 4H-SiC Wafer Manufacturer(50.8mm-200mm) Diameter Are you looking for 4H-SiC Wafer? As the professional Best Price 4H-SiC Wafer Manufacturer, HMT still can supply 50.8mm-200mm SiC Substrate Wafer at the ...

Company: Homray Material Technology

Sic Wafer Manufacturer 8 Inch 6 Inch (200mm, 150mm) Best Price

12078.

Sic Wafer Manufacturer 8 Inch 6 Inch (200mm, 150mm) Best Price Open Details in New Window [Feb 09, 2026]

SiC Wafer Manufacturer 8 Inch 6 Inch (200mm, 150mm) Best Price HMT provides 6 inch (150mm) and 8 inch (200mm) SiC Wafer to worldwide semiconductor companies, research labs and famous universities. Our 6 inch (150mm) ...

Company: Homray Material Technology

Sic Epitaxial Wafers Supplier for 600V~6500V Power Device N Type

12079.

Sic Epitaxial Wafers Supplier for 600V~6500V Power Device N Type Open Details in New Window [Feb 09, 2026]

As the leading SiC Epitaxial Wafers Supplier, HMT provide customize 4 inch, 6 inch and 8 inch SiC on SiC Epi Wafer for the development of silicon carbide devices. Our SiC Epi Layer have N-type epi layer and P-type epi ...

Company: Homray Material Technology

8 Inch GaN Epi Wafer Manufacturer for LV Breakdown Voltage<200V

12080.

8 Inch GaN Epi Wafer Manufacturer for LV Breakdown Voltage<200V Open Details in New Window [Aug 22, 2025]

8 inch GaN Epi Wafer Manufacturer for LV Breakdown voltage<200V As the GaN Epi Wafer manufacturer and supplier, HMT can provide GaN on Si Epi Wafer with breakdown voltage <200V, epi thickness <2.2um. Meanwhile, we ...

Company: Homray Material Technology

6 Inch Sic Wafer Without Polishing Manufacturer 600um Thickness

12081.

6 Inch Sic Wafer Without Polishing Manufacturer 600um Thickness Open Details in New Window [Aug 22, 2025]

6 inch SiC Wafer without polishing Manufacturer 600um thickness As the leading manufacturer of SiC Substrate, HMT company also offer high quanlity Raw-cut SiC Wafer both for 6 inch and 4 inch. Our Un-grinding SiC ...

Company: Homray Material Technology

Smif Specification Lpt 2200 Has Been Exported Overseas

12082.

Smif Specification Lpt 2200 Has Been Exported Overseas Open Details in New Window [Aug 19, 2024]

Wafer Size: 200mm Cassette Pick-up Position: 909mm (35.8 inches) Cassette Positioning: To within &plusmn;0.005 inches (vertical) SMIF-Pod Load Height: 900mm (35.5 inches) Nominal Maximum Reach of Load ...

Company: HongHu(Su Zhou)Semiconductor Technology Co.,Ltd.

4 Inch GaN Substrate Wafer Manufacturer N Type Si Doped

12083.

4 Inch GaN Substrate Wafer Manufacturer N Type Si Doped Open Details in New Window [Aug 22, 2025]

4 inch GaN Substrate Wafer Manufacturer single side polished As the leading GaN wafer manufacturer in China,HMT company offer 4 inch sapphire substrate GaN wafers both for un-doped N type and SI type. GaN layer ...

Company: Homray Material Technology

2 Inch Free Standing GaN Wafer Supplier Un-Doped

12084.

2 Inch Free Standing GaN Wafer Supplier Un-Doped Open Details in New Window [Aug 22, 2025]

2 inch free standing GaN wafer supplier un-doped HMT company offer 2inch and 4 inch Free-standing GaN substrate in the market. The GaN thickness about 400um. We have un-doped and Si-doped GaN wafer. Meanwhile,we ...

Company: Homray Material Technology

4 Inch GaN-on-Sic Epi Wafer for RF Application Hemt

12085.

4 Inch GaN-on-Sic Epi Wafer for RF Application Hemt Open Details in New Window [Aug 22, 2025]

4 inch GaN-on-SiC Epi Wafer for RF application HEMT 100mm or 150mm GaN Epi-wafers on SiC substrates by using Semi-Insulating are available. Our GaN-on-SiC Epi wafers are grown by the MOCVD process using AIXTRON and ...

Company: Homray Material Technology

Diode Pumped Laser Modules

12086.

Diode Pumped Laser Modules Open Details in New Window [Aug 21, 2024]

Features: High output High optical-optical conversion efficiency Reliable sealing Long life time over 10000 hours Compact Remark: Cooling water temperature: 20oC, flat-flat resonator, resonator length 165mm, ...

Company: Nanjing Keystone Laser Technology Co., Ltd.

Double Sided Lapping & Polishing Machine

12087.

Double Sided Lapping & Polishing Machine Open Details in New Window [Aug 21, 2024]

Application: Mainly used for high-precision double-sided lapping and polishing of optical glass, sapphire, ceramic, crystals, semiconductors, and other hard and brittle materials.Especially for the processing of ...

Company: Fulan Optics Machine Co., Ltd

Smif Versaport Has Been Exported Overseas

12088.

Smif Versaport Has Been Exported Overseas Open Details in New Window [Aug 19, 2024]

Platform Mount BOLTS Configuration Wafer Size 200mm 200mm Height 488.95mm 1385mm Width 370.84mm BOLTS interface = 470mm Depth 396.24mm 415.3mm Weight 15.87 Kg 56.70 Kg Port Plate Height while ...

Company: HongHu(Su Zhou)Semiconductor Technology Co.,Ltd.

Premium Sic Wafer Supplier 4h-Sic (350um, 500um) Thickness

12089.

Premium Sic Wafer Supplier 4h-Sic (350um, 500um) Thickness Open Details in New Window [Feb 09, 2026]

Premium SiC Wafer Supplier 4H-SiC (350um, 500um) Thickness Optimize your production with our low-MOQ SiC Wafer Supplier 4H-SiC (350um, 500um). Available in N-type and Semi-insulating of different grades, our ...

Company: Homray Material Technology

GaN on Sapphire Substrate Manufacturer GaN Templates Supplier

12090.

GaN on Sapphire Substrate Manufacturer GaN Templates Supplier Open Details in New Window [Aug 22, 2025]

GaN on Sapphire Substrate Manufacturer GaN Templates Supplier HMT offers 2 inch 4 inch GaN Templates with un-doped N type and Si-doped N type. The substrate is sapphire and GaN epi layer about 4.5um. Our GaN on ...

Company: Homray Material Technology