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Product List
181. Schottky Barrier Rectifier Diode Ss34 (SMA case) 
[Dec 11, 2025]
[Dec 11, 2025] 3A, 40V-SCHOTTKY DIODE-SS34/SK34(SMA CASE) Datasheet Products list SURFACE MOUNE SCHOTTKY BARRIER RECTIFIERS TYPE Maximum Peak Maximum Average Maximum Forward Maximum Reverse Maximum ...
182. Three-termainal regulator IC DH7107GP DIP40 [Jul 31, 2026]
[Jul 31, 2026] The DH7107 are high performance, low power, 31/2 digit A/D converters. Included are seven segment decoders, display drivers, a reference, and a clock. The DH7107 will directly drive an instrument size light emitting ...
183. 373A 100V N-Channel Enhancement Mode Power MOSFET DSU014N10N3A TOLL [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 458 A (T=100ºC) 324 A Drain ...
184. 200A 40V N-Channel Enhancement Mode Power MOSFET D1404 TO-220 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT D1404/ID1404/ED1404 FD1404 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
185. 12A 650V N-Channel Enhancement Mode Power MOSFET 12N65 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 12N65/I12N65/E12N65 F12N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain ...
186. 80A 600V Fast Recovery Diode MUR8060DCT TO-3P [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
187. 40A 30V N-Channel Enhancement Mode Power MOSFET DHD80N03 TO-252B [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHB80N03/DHD80N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) (Silicon limit) 76 ID(T=25ºC) ...
188. 60A 200V Fast Recovery Diode MUR6020DCT TO-3P [Aug 13, 2026]
[Aug 13, 2026] Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...
189. 30A 600V Insulated Gate Bipolar Transistor IGBT G30N60D TO-247 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 600 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 60 A Collector Current (Tc=100ºC) 30 A Pulsed ...
190. 130A 60V N-Channel Enhancement Mode Power MOSFET DHS130N06D TO-252 [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHS130N06/DHS130N06I/DHS130N06E/DHS130N06BDHS130N06D DHS130N06F Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain ...
191. 100A 70V N-Channel Enhancement Mode Power MOSFET DH070N07 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DH070N07 Drian-to-Source Voltage VDSS 70 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 63 A Drain ...
192. 50A 40V N-Channel Enhancement Mode Power MOSFET 50N04 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
193. 100A 68V N-Channel Enhancement Mode Power MOSFET DH060N07D TO-252B [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 68 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 100 A (T=100ºC) 70 A Drain ...
194. 100A 100V N-Channel Enhancement Mode Power MOSFET DHS065N10 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
195. 20A 650V N-Channel Enhancement Mode Power MOSFET 20N65 TO-220C [Aug 13, 2026]
[Aug 13, 2026] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
