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240A 100V N-Channel Enhancement Mode Power MOSFET DSC018N10N TO-247
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196.

240A 100V N-Channel Enhancement Mode Power MOSFET DSC018N10N TO-247 Open Details in New Window [Aug 13, 2026]

DSC018N10N 100V/1.5mΩ/240A N-MOSFET Company: DONGHAI Features Low on resistance Low reverse transfer capacitances 100% single pulse avalanche energy test 100% ΔVDS test Pb-Free plating / ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 200V Fast Recovery Diode MUR6020NCA TO-3PN
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197.

60A 200V Fast Recovery Diode MUR6020NCA TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C
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198.

180A 100V N-Channel Enhancement Mode Power MOSFET DSG040N10N3A TO-220C Open Details in New Window [Sep 05, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252
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199.

80A 60V N-Channel Enhancement Mode Power MOSFET D80N06 TO-252 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT 80N06/I80N06/E80N06/B80N06/D80N06 F80N06 Maximum Drian-Source DC Voltage VDS 60 V Maximum Gate-Drain Voltage VGS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C
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200.

120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N85 TO-220C Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DHS045N85 Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 76 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

7.0A 1700V N-Channel SiC Power MOSFET DCC650M170G1 TO-247
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201.

7.0A 1700V N-Channel SiC Power MOSFET DCC650M170G1 TO-247 Open Details in New Window [Aug 13, 2026]

5A 1700V N-channel SIC Power MOSFET Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 200V N-Channel Enhancement Mode Power MOSFET DH640 TO-220
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202.

18A 200V N-Channel Enhancement Mode Power MOSFET DH640 TO-220 Open Details in New Window [Aug 13, 2026]

PARAMETER SYMBOL VALUE UNIT DH640/DHI640/DHE640 DHF640 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

9A 900V N-Channel Enhancement Mode Power MOSFET 9N90 TO-3PN
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203.

9A 900V N-Channel Enhancement Mode Power MOSFET 9N90 TO-3PN Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT 9N90 9N90 Maximum Drian-Source DC Voltage VDS 900 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 80V N-Channel Enhancement Mode Power MOSFET DSG047N08N3 TO-220C
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204.

120A 80V N-Channel Enhancement Mode Power MOSFET DSG047N08N3 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 120 A (T=100ºC) 85 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B
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205.

90A 30V N-Channel Enhancement Mode Power MOSFET DHD90N03 TO-252B Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHB90N03 DHD90N03 Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C
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206.

63A 60V N-Channel Enhancement Mode Power MOSFET DH132N06 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH132N06 Units DH132N06I/DH132N06E DH132N06B/DH132N06D DH132N06F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06 TO-220C
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207.

180A 60V N-Channel Enhancement Mode Power MOSFET DHS025N06 TO-220C Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DHS025N06/DHS025N06E Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 128 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 30V N-Channel Enhancement Mode Power MOSFET DH030N03D TO-252
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208.

120A 30V N-Channel Enhancement Mode Power MOSFET DH030N03D TO-252 Open Details in New Window [Aug 09, 2026]

PARAMETER SYMBOL VALUE UNIT DH030N03/DH030N03I/DH030N03E/DH030N03B/DH030N03D DH030N03F Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Versatile 12V Peltier Cooling Module for Efficient Temperature Control Cooling Element
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209.

Versatile 12V Peltier Cooling Module for Efficient Temperature Control Cooling Element Open Details in New Window [Mar 06, 2026]

Product Description Presenting the TEC1-12705, an adaptable 40x40mm thermoelectric cooler crafted to provide unmatched thermal management solutions. Chip Type: Cutting-edge TEC1-12705, setting the standard in ...

Company: Zhenjiang Zhendi Electric Technology Co., Ltd

70A 200V Fast Recovery Diode MUR7020NCA TO-3PN
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210.

70A 200V Fast Recovery Diode MUR7020NCA TO-3PN Open Details in New Window [Aug 09, 2026]

Features Low power loss, high efficiency Low forward voltage, high current capability High surge capacity Super fast recovery times high voltage Applications Switching Power Supply Power Switching ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd