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6 Inch Sic Wafer Substrate 4h-N Type

28561.

6 Inch Sic Wafer Substrate 4h-N Type Open Details in New Window [Nov 05, 2024]

Item 4H n-type SiC ...

Company: Jxt Technology Co., Ltd.

8 Inch Sic Wafer Substrate 4h-N Type

28562.

8 Inch Sic Wafer Substrate 4h-N Type Open Details in New Window [Nov 05, 2024]

Item 4H n-type SiC ...

Company: Jxt Technology Co., Ltd.

4 Inch Sic Wafer Substrate 4h-N Type

28564.

4 Inch Sic Wafer Substrate 4h-N Type Open Details in New Window [Nov 05, 2024]

Item 4H n-type SiC ...

Company: Jxt Technology Co., Ltd.

4 Inch GaN on Silicon Epitaxial Wafer

28565.

4 Inch GaN on Silicon Epitaxial Wafer Open Details in New Window [Nov 05, 2024]

GaN on Silicon: Typical Structure: Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on silicon(111) 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate)

28566.

2 Inch Gallium Nitride Wafer (GaN Freestanding Substrate) Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ...

28567.

2 Inch Sapphire Wafers for LED Manufacturing\Optoelectronic Devices\Semiconductor ... Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate

28568.

4 Inch Gallium Nitride Wafer (GaN Wafer) GaN Freestanding Substrate Open Details in New Window [Nov 05, 2024]

SPECIFICATION Item Free-standing GaN Wafer(2~4inch) Diameter 50.8±0.3mm 76.2±0.3mm 100.0±0.3mm Thickness 400±30μm 450±30μm 450±30μm Surface ...

Company: Jxt Technology Co., Ltd.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped

28569.

2 Inch GaN on Sapphire / Epi Wafer / N-Type/P-Type/Undoped Open Details in New Window [Nov 05, 2024]

GaN on Sapphire Typical Structure Typical Specification: 1.undoped GaN GaN layer thickness up to 7μm on sapphire 2.n-type GaN(Si-doping) ...

Company: Jxt Technology Co., Ltd.

6 Inch Sapphire Substrate

28570.

6 Inch Sapphire Substrate Open Details in New Window [Nov 05, 2024]

With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...

Company: Jxt Technology Co., Ltd.

Daybright All-in-One Ess

28571.

Daybright All-in-One Ess Open Details in New Window [Aug 23, 2024]

Daybright ALL-IN-ONE ESS integrates energy storage system modules to support off-grid/grid-connected use and cloud monitoring.With the first-class LFP core and self-developed intelligent BMS battery management system, ...

Company: Lkk Cultural Development Nanjing Co., Ltd

Dg2-VCR Ultra-High Purity Pressure Transmitter for Semiconductor Manufacturing, Ultra-High Purity ...
Contact Now

28572.

Dg2-VCR Ultra-High Purity Pressure Transmitter for Semiconductor Manufacturing, Ultra-High Purity ... Open Details in New Window [Jan 15, 2025]

Audited Supplier

Product Parameters Model No. DG2-VCR Output Signal Type Direct current Production Process Micro Fusion Material 17-4PH/316L(VIM+VAM)/Hastelloy Thread Type 1/4VCR, Customized Wiring Type 1, Direct outlet 2, ...

Company: Shenzhen Maxonic Automation Control Co., Ltd Senex Branch

Semiconductor SMD Diode Mbr1040CT-Mbr10200CT 200V/10A with to-220ab Package Schottky Barrier ...
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28573.

Semiconductor SMD Diode Mbr1040CT-Mbr10200CT 200V/10A with to-220ab Package Schottky Barrier ... Open Details in New Window [Jan 11, 2025]

FAQ:1, Are you Manufacturer or trading company? We are a manufacturer only in diode, bridge rectifiers and automotive rectifier diode. We could supply competitive price and fast delivery and good quality with prompt ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

dB101s Original Discrete Semiconductor Products Diodes Bridge Rectifiers Bridge Rectifier
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28574.

dB101s Original Discrete Semiconductor Products Diodes Bridge Rectifiers Bridge Rectifier Open Details in New Window [Jan 11, 2025]

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.

Original Discrete Semiconductor Products Diodes Bridge Rectifiers Bridge Rectifier GBP 1kv 3A
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28575.

Original Discrete Semiconductor Products Diodes Bridge Rectifiers Bridge Rectifier GBP 1kv 3A Open Details in New Window [Jan 11, 2025]

Fast recovery rectifier diode belongs to the high frequency rectifier diode rectifier diode, is referred to as the fast recovery diode, this is because the general rectifier diode is generally work in low frequency ...

Company: Jiangsu Zhongxin Semiconductor Co., Ltd.