Jiangsu Profile
Product List
13711. High Temperature Peek Parts for Electronic Semiconductors 
[Aug 21, 2024]
[Aug 21, 2024] PEEK, PI has excellent electrical properties make it an excellent electrical insulator, may be in a very wide temperature, pressure and frequency fluctuation range, long-term stability. The ultra-high temperature ...
Company: Jiangsu Junhua Hpp Co., Ltd.
13712. G45p02D3-Lt Package Dfn3.3*3.3-8L -20V Semiconductor Electronic Component Power Mosfet Transistor ... [Nov 17, 2021]
[Nov 17, 2021] PACKAGING &SHIPPING: 1. The order normally will be shipped within 3to7 working days upon the availability of the stock. If there is no enough stock, please check with us for the earliest shipment. 2. GOFORD ...
Company: Wuxi Goford Semiconductor Co., Ltd.
13713. High Power SCR Diodes and Chips [May 17, 2026]
[May 17, 2026] Advanced Technology 650V, 1200V, 1500V, 1700V, 2000V, 3300V series of SiC MOSFETs have been mass-produced 15-20%Smaller Die vs Domestic Peers 1200V/10mΩ &1700V/14mΩ &3300V/58mΩ SiC MOSFET are in ...
13714. 8 Inch 4h-N Sic Substrate Manufacturer (D Grade, P Grade) [Apr 17, 2026]
[Apr 17, 2026] 8 Inch 4H-N SiC Substrate Manufacturer (D Grade, P Grade) As the professional 8 Inch 4H-N SiC Substrate Manufacturer in china, HMT can provide 8 inch 4H-N SiC substrate (D Grade, P Grade) now. 8 inch is the large ...
Company: Homray Material Technology
13715. 4 Inch Sic Boules Manufacturer Sic Seed Boule [Apr 17, 2026]
[Apr 17, 2026] 4 inch SiC Boules Manufacturer SiC seed Boule SiC Boule Manufacturers HMT supply 4 inch D grade SiC Boule For wafer polishing Machine Testing. we supply both 4 inch and 6 inch D grade R grade and P grade SiC Boule with ...
Company: Homray Material Technology
13716. 3 Inch 4 Inch Sic Substrate Manufacturer (N-type, P-type, SI-type) [Apr 17, 2026]
[Apr 17, 2026] Are you looking for 3 inch 4 inch SiC Substrate Manufacturer? HMT provide 3 inch 4 inch 6 inch 8 inch SiC Wafer (N-type, P-type, SI-type) with bottom price on the market. We can supply all types for SIC wafer, including ...
Company: Homray Material Technology
13717. 150mm RF GaN Si Hemt Epi-Wafers Manufacturers and Supplier [Feb 09, 2026]
[Feb 09, 2026] 150mm RF GaN Si HEMT epi-wafers manufacturers and supplier Homray Material Technology manufacture 150mm 6inch RF GaN on Si HEMT epi wafers, we also supply D-MODE and E-MODE structures GaN epi wafers. HMT technology ...
Company: Homray Material Technology
13718. GaN-on-Sic Epitaxial Structures Wafer Manufacturer with 4 or 6 Inch Diameter [Feb 09, 2026]
[Feb 09, 2026] GaN-on-SiC epitaxial structures wafer manufacturer with 4 or 6 inch diameter GaN-on-SiC Epi wafer supplier and manufacturer HMT offer 4 inch and 6 inch AlGaN/GaN-on-SiC epi wafer with competitive price at the market. ...
Company: Homray Material Technology
13719. 6 Inch Sapphire Substrate [Nov 05, 2024]
[Nov 05, 2024] With superior hardness and durability, Sapphire wafers are resistant to scratches, wear, and high temperatures, high transparency in the ultraviolet, visible, and infrared regions, sapphire wafer (sapphire substrate and ...
Company: Jxt Technology Co., Ltd.
13720. High Current High Voltage Disc Type Rectifier Diode, Capsule Type Diode [Aug 23, 2024]
[Aug 23, 2024] ***Our main business *** 1)thyristor and diode chips 2)thyristor: Phase control thyristor(kp), fast switching thyristor(kk), Bi-directional Triode Thyristor(TRIAC). 3)diode: Rectifier diode(zp), fast recovery ...
13721. GaN/Si Epi Wafer Manufacturing for 650V 1200V High-Voltage GaN Device [Apr 17, 2026]
[Apr 17, 2026] GaN/Si Epi Wafer Manufacturing for 650v 1200v High-Voltage GaN Device HMT is using Aixtron MOCVD to produce high quality 8 inch GaN on Si Epi wafer. We have support High voltage 650v 1200v....and low voltage 200v ...
Company: Homray Material Technology
13722. GaN Epi Grown on Sapphire Wafer Manufacturer and Supplier [Apr 17, 2026]
[Apr 17, 2026] GaN Epi grown on Sapphire wafer manufactuer and supplier Homray Material Technology produces and supplies GaN-on-Sapphire epi wafer with 4 inch and 6 inch for power device.The products have extremely high electron ...
Company: Homray Material Technology
13723. 6 Inch Sic Epitaxial Wafers Manufacturer for Microwave RF [Apr 17, 2026]
[Apr 17, 2026] 6 Inch SiC Epitaxial Wafers Manufacturer For Microwave RF Homray Material Technology provides 4 inch and 6 inch high-performance and high-quality GaN-on-SiC GaN HEMT epitaxial wafers with below features: We also ...
Company: Homray Material Technology
13724. Mg Doped P-GaN Cap GaN-on-Si Epi Wafer Supplier E-Hemt Wafer Manufacturer [Apr 17, 2026]
[Apr 17, 2026] Mg doped p-GaN Cap GaN-on-Si Epi Wafer Supplier E-HEMT wafer manufacturer As the professional GaN Epi Wafer Suppliers in China, HMT can offer Mg doped p-GaN cap layer E-HEMT GaN on Si epitaxy wafers. we supply 4 ...
Company: Homray Material Technology
13725. 4 Inch GaN-on-Si D-Hemt Epitaxy Wafer Manufacturer for Power Device [Apr 17, 2026]
[Apr 17, 2026] 4 Inch GaN-on-Si D-HEMT Epitaxy Wafer Manufacturer for Power Device The GaN on Si D-HEMT epi wafer manufactured by Homray Material Technology, can be used in 650V electronic electric HEMT and RF RF high electron ...
Company: Homray Material Technology
