Jiangsu Profile
Product List
1486. N Channel Mosfet G30n03D3 30V 30A Dfn Package Transistor for Fast Charge 
[Nov 14, 2023]
[Nov 14, 2023] N Channel MOSFET G30N03D3 30V 30A DFN Package Transistor for Fast Charge General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1487. Electronic Components Mosfet Transistor G7p03D2 30V 7A Dfn2*2-6L [Sep 28, 2022]
[Sep 28, 2022] Electronic Components Mosfet Transistor G7P03D2 30V 7A Dfn2*2-6L General Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1488. 2300f 20V 6A N-Channel Sot-23 Original New IC Transistor (Electronics) [Aug 19, 2022]
[Aug 19, 2022] Product Description 2300f 20V 6A N-Channel Sot-23 Original new IC transistor (Electronics) Part Number 2300F VDSS 20V ID 6A RDS 20 mΩ @ vgs=4.5V Vth 0.65V Package SOT-23 Ciss 630 pF Crss 60 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1489. Power Mosfet 03n06 (SI2308BDS) 60V 3A N-Channel Sot-23-3 Transistor [Aug 19, 2022]
[Aug 19, 2022] Product Description Power mosfet 03N06 (SI2308BDS) 60V 3A N-Channel SOT-23-3 transistor Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 pF Crss 19.5 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1490. Free Shipping Mosfet 03n06 Sot-23-3L 60V 3A Transistor [Jun 10, 2022]
[Jun 10, 2022] Free Shipping MOSFET 03N06 SOT-23-3L 60V 3A Transistor General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1491. Power Mosfet Manufacturer G3710 Irf3710z Irf3710 Equivalent Transistor with to-220 Package [Jun 10, 2022]
[Jun 10, 2022] Power MOSFET Manufacturer G3710 IRF3710Z IRF3710 Equivalent Transistor with TO-220 Package General Description The G3710 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1492. Goford Mosfet G30n03A 30V 30A Dfn3*3-8L Mosfet Transistor for SMPS [Mar 18, 2022]
[Mar 18, 2022] GOFORD MOSFET G30N03A 30V 30A DFN3*3-8L MOSFET Transistor for SMPS General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1493. Fmmt720 2A 25V NPN Sot23 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1494. B649A 0.9A -160V Pnpto-92 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1495. Bc847 0.1A 50V NPN to-92 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1496. Bc557 0.1A 51V NPN to-92 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1497. C3203 1.2A 25V NPN to-92 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1498. Bc337-40 2A 25V NPN to-92 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1499. 2sc2655 2A -25V PNP to-92 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1500. 2sc2383 1A 100V NPN to-92 Transistor [Mar 02, 2022]
[Mar 02, 2022] Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
