Jiangsu Profile

Product List
1381. Mosfet Manufacturer G48n03D3 30V 48A Dfn Package IC Transistor for Fast Charger
[Oct 08, 2021]

Mosfet Manufacturer G48N03D3 30V 48A DFN Package IC Transistor for Fast Charger General Description The G48N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1382. N Channel Mosfet G30n03D3 30V 30A Dfn Package Transistor for Fast Charge
[Nov 14, 2023]

N Channel MOSFET G30N03D3 30V 30A DFN Package Transistor for Fast Charge General Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1383. Electronic Components Mosfet Transistor G7p03D2 30V 7A Dfn2*2-6L
[Sep 28, 2022]

Electronic Components Mosfet Transistor G7P03D2 30V 7A Dfn2*2-6L General Description The G7P03D2 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1384. 2300f 20V 6A N-Channel Sot-23 Original New IC Transistor (Electronics)
[Aug 19, 2022]

Product Description 2300f 20V 6A N-Channel Sot-23 Original new IC transistor (Electronics) Part Number 2300F VDSS 20V ID 6A RDS 20 mΩ @ vgs=4.5V Vth 0.65V Package SOT-23 Ciss 630 pF Crss 60 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1385. Power Mosfet 03n06 (SI2308BDS) 60V 3A N-Channel Sot-23-3 Transistor
[Aug 19, 2022]

Product Description Power mosfet 03N06 (SI2308BDS) 60V 3A N-Channel SOT-23-3 transistor Part Number 03N06 VDSS 60V ID 3A RDS 81mΩ @ vgs=4.5V Vth 1.35V Package SOT-23 Ciss 247 pF Crss 19.5 pF ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1386. Free Shipping Mosfet 03n06 Sot-23-3L 60V 3A Transistor
[Jun 10, 2022]

Free Shipping MOSFET 03N06 SOT-23-3L 60V 3A Transistor General Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1387. Power Mosfet Manufacturer G3710 Irf3710z Irf3710 Equivalent Transistor with to-220 Package
[Jun 10, 2022]

Power MOSFET Manufacturer G3710 IRF3710Z IRF3710 Equivalent Transistor with TO-220 Package General Description The G3710 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1388. Goford Mosfet G30n03A 30V 30A Dfn3*3-8L Mosfet Transistor for SMPS
[Mar 18, 2022]

GOFORD MOSFET G30N03A 30V 30A DFN3*3-8L MOSFET Transistor for SMPS General Description The G30N03A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide ...
Company: Wuxi Goford Semiconductor Co., Ltd.
1389. Fmmt720 2A 25V NPN Sot23 Transistor
[Mar 02, 2022]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1390. B649A 0.9A -160V Pnpto-92 Transistor
[Mar 02, 2022]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1391. Bc847 0.1A 50V NPN to-92 Transistor
[Mar 02, 2022]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1392. Bc557 0.1A 51V NPN to-92 Transistor
[Mar 02, 2022]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1393. C3203 1.2A 25V NPN to-92 Transistor
[Mar 02, 2022]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1394. Bc337-40 2A 25V NPN to-92 Transistor
[Mar 02, 2022]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
1395. 2sc2655 2A -25V PNP to-92 Transistor
[Mar 02, 2022]

Yangzhou Genesis Microelectronics Co., Ltd., a sino-foreign joint venture, is a national high-tech enterprise which was founded in 1998 with the aggregate investment of 50,000,000 dollars and the registered capital of ...
