Jiangsu Profile
Famous Export Brand
Product List
751. 20A 100V N-Channel Enhancement Mode Power MOSFET DHS400N10D TO-252B 
[Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 20 A (T=100ºC) 13 A Drain ...
752. 120A 85V N-Channel Enhancement Mode Power MOSFET DHS045N88D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHS045N88 /DHS045N88E /DHS045N88B/ DHS045N88D DHS045N 88F Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain ...
753. 180A 40V N-Channel Enhancement Mode Power MOSFET DTG018N04N TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 300 A (T=100ºC) 180 A Drain ...
754. 70A 40V N-Channel Enhancement Mode Power MOSFET 70N04 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 70N04A4/ E70N04A4/ B70N04A4/ D70N04A4 F70N04A4 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
755. 40A 60V P-Channel Enhancement Mode Power MOSFET DH400P06 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH400P 06F DH400P06/DH400P06E/ DH400P06B/DH400P06D Drian-to-Source Voltage VDSS -60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
756. 30A 100V P-Channel Enhancement Mode Power MOSFET DH100P30CD TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH100P30C /DH100P30CE DH100P30CB/DH100P30CD DH100 P30CF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...
757. 7.6A 650V N-Channel Super Junction Power MOSFET DHFSJ8N65 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DHFSJ8N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 7.6 A (T=100ºC) 4.8 A Drain ...
758. 145A 60V N-Channel Enhancement Mode Power MOSFET DH045N06 TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
759. 320A 30V N-Channel Enhancement Mode Power MOSFET DH012N03D TO-252B [Aug 09, 2026]
[Aug 09, 2026] SYMBOL VALUE UNIT Min Typ. Max BVDSS 30 - 35 V ID (T=25ºC) - - 320 A BVGSS ±20 V VTH 1 2 V EAS - - 1600 mJ Ptot - - 270 W Rdson 1.5 - 2.0 mΩ ...
760. 9A 900V N-Channel Enhancement Mode Power MOSFET 9N90B TO-247 [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT 9N90B Drian-to-Source Voltage VDSS 900 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 9 0A (T=100ºC) 5.7 A Drain ...
761. 18A 500V N-Channel Enhancement Mode Power MOSFET F18N50 TO-220F [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT F18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...
762. 220A 40V N-Channel Enhancement Mode Power MOSFET DTG025N04NA TO-220C [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DTG025N04NA Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 220 A (T=100ºC) 155 A Drain ...
763. 10A 700V N-Channel Enhancement Mode Power MOSFET D10N70 TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 700 V Maximum Gate-Drain Voltage VGS ±30 V Drain Current(continuous) ID(T=25ºC) 10 A (T=100ºC) 6.3 A Drain ...
764. 140A 30V P-Channel Enhancement Mode Power MOSFET DH060P03D TO-252B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...
765. 50A 30V N-Channel Enhancement Mode Power MOSFET DHB50N03 TO-251B [Aug 09, 2026]
[Aug 09, 2026] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
