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240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c
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751.

240A 100V N-Channel Enhancement Mode Power Mosfet Dhs025n10 to-220c Open Details in New Window [Jul 16, 2026]

Parameter SYMBOL VALUE UNIT DHS025N10/DHS025N10E DHS025N10D/ DHS025N10B Drian-to-Source Voltage BVDSS 100 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30CD to-252b
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752.

30A 100V P-Channel Enhancement Mode Power Mosfet Dh100p30CD to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P30C /DH100P30CE DH100P30CB/DH100P30CD DH100 P30CF Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b
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753.

Hot Sale 25A 100V N-Channel Enhancement Mode Power Mosfet Dhs250n10d to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 25 A (T=100ºC) 18 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b
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754.

12A 100V N-Channel Enhancement Mode Power Mosfet Dh850n10b to-251b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 12 A (T=100ºC) 8 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 80V N-Channel Enhancement Mode Power Mosfet Dh8004 to-220c
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755.

180A 80V N-Channel Enhancement Mode Power Mosfet Dh8004 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHI8004/ DHE8004 DH8004D DH8004B Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40d to-252b
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756.

40A 100V P-Channel Enhancement Mode Power Mosfet Dh100p40d to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P40D Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) -40 A (T=100ºC) -28 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power Mosfet F8n50 to-220f
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757.

8A 500V N-Channel Enhancement Mode Power Mosfet F8n50 to-220f Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT F8N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 500V N-Channel Enhancement Mode Power Mosfet 18n50 to-220c
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758.

18A 500V N-Channel Enhancement Mode Power Mosfet 18n50 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 18N50 Drian-to-Source Voltage VDSS 500 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 18 A (T=100ºC) 11 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b
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759.

Hot Sale 35A 100V P-Channel Enhancement Mode Power Mosfet Dh100p35D to-252b Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DH100P35/ DH100P35I/ DH100P 35E/ DH100P35B/ DH100P35D DH100P 35F Drian-to-Source Voltage VDSS -100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c
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760.

Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10 to-220c
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761.

100A 100V N-Channel Enhancement Mode Power Mosfet Dhs065n10 to-220c Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS065N10/ DHS065N10E/ DHS065N10B/ DHS06 5N10D DHS06 5N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b
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762.

80A 60V N-Channel Enhancement Mode Power Mosfet Datd063n06n to-252b Open Details in New Window [Jul 16, 2026]

SYMBOL VALUE UNIT Min Typ. Max BVDSS - - 60 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 400 mJ Ptot - - 2.5 W Rdson - - 2.2 mΩ Features AEC-Q101 qualified MSL1 ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10f to-220f
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763.

130A 100V N-Channel Enhancement Mode Power Mosfet Dhs037n10f to-220f Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT DHS037N10F Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 130 A (T=100ºC) 110 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220
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764.

8A 500V N-Channel Enhancement Mode Power Mosfet 840 to-220 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 840/I840/E840/B840/D840 F840 Drian-to-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252
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765.

600V 7A N-Channel Enhancement Mode Power Mosfet D7n60 to-252 Open Details in New Window [Jul 16, 2026]

PARAMETER SYMBOL VALUE UNIT 7N60/I7N60/E7N60/B7N60/D7N60 F7N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd