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210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263
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751.

210A 60V N-Channel Enhancement Mode Power Mosfet Dhe027n06 to-263 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH027N06/DHI027N06/DHE027N06/DH027N06D/DH027N06B DHF027N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±25 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

60A 100V N-Channel Enhancement Mode Power Mosfet Dh0159
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752.

60A 100V N-Channel Enhancement Mode Power Mosfet Dh0159 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH0159/DHE015 9/DHB0159/DHD0159 DHF0159 Drian-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252
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753.

180A 85V N-Channel Enhancement Mode Power Mosfet Dsd040n08n3a to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 85 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 800V N-Channel Super Junction Power Mosfet Djg660n80e to-220c
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754.

8A 800V N-Channel Super Junction Power Mosfet Djg660n80e to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

81A 80V N-Channel Enhancement Mode Power Mosfet Dh060n08 to-220c
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755.

81A 80V N-Channel Enhancement Mode Power Mosfet Dh060n08 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH060N08 /DH060N08B DH060N08D/ DH060N08E DH060N08F Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06D to-252
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756.

120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06D to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c
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757.

180A 135V N-Channel Enhancement Mode Power Mosfet DSG045n14n to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D
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758.

85A 150V N-Channel Enhancement Mode Power Mosfet Dhs110n15D Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 85 A (T=100ºC) 60 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

4.8A 650V N-Channel Super Junction Power Mosfet Dhdsj5n65 to-252
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759.

4.8A 650V N-Channel Super Junction Power Mosfet Dhdsj5n65 to-252 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c
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760.

18A 200V N-Channel Enhancement Mode Power Mosfet 18n20 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT 18N20/I18N20/E18N20/B18N20/D18N20 F18N20 Drian-Source Voltage VDS 200 V Gate-to-Source Voltage VGS ±30 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

83A 600V N-Channel Super Junction Power Mosfet Djc032n60f to-247
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761.

83A 600V N-Channel Super Junction Power Mosfet Djc032n60f to-247 Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 600 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 83 A (T=100ºC) 53 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c
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762.

50A 120V N-Channel Enhancement Mode Power Mosfet Dh150n12 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH150N12 / DH150N12E DH150N12B / DH150N12D DH150N 12F Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c
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763.

-140A -60V P-Channel Enhancement Mode Power Mosfet DTG050p06la to-220c Open Details in New Window [Jun 23, 2025]

SYMBOL VALUE UNIT Min Typ. Max BVDSS -60 - -70 V ID (T=25ºC) - - -140 A BVGSS ±20 V VTH -1 -3 V EAS - - 1369 mJ Ptot - - 2.5 W Rdson 14 - 5.8 mΩ ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f
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764.

8A 700V N-Channel Enhancement Mode Power Mosfet F8n70 to-220f Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5 A Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03 to-220c
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765.

140A 30V P-Channel Enhancement Mode Power Mosfet Dh060p03 to-220c Open Details in New Window [Jun 23, 2025]

PARAMETER SYMBOL VALUE UNIT DH060P 03F DH060P03/DH060P03E/ DH060P03B/DH060P03D Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±20 V Drain ...

Company: Jiangsu Donghai Semiconductor Co.,Ltd