Jiangsu Profile
Product List
901. 80A 80V N-Channel Enhancement Mode Power Mosfet Dhe80n08 to-263 
[Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH80N08/DHI80N08/DHE80N08/DHB80N08/DHD80N08 DHF80N08 Drian-to-Source Voltage VDSS 80 V Gate-to-Source Voltage VGSS ±25 V Drain ...
902. 140A 90V N-Channel Enhancement Mode Power Mosfet Dh140n09 to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 90 - 97 V ID (T=25ºC) - - 140 A BVGSS ±20 V VTH 2 4 V EAS - - 1080 mJ Ptot - - 250 W Rdson 6.5 - 7.5 mΩ ...
903. 85A 60V N-Channel Enhancement Mode Power Mosfet Dh066n06 to-220 [Jun 24, 2024]
[Jun 24, 2024] SYMBOL VALUE UNIT Min Typ. Max BVDSS 60 - 68 V ID (T=25ºC) - - 85 A BVGSS ±20 V VTH 2 4 V EAS - - 484 mJ Ptot - - 150 W Rdson 5.5 - 6.5 mΩ ...
904. 155A 40V N-Channel Enhancement Mode Power Mosfet DHD035n04 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH035N04/DHI035N04/DHE035N04/DHB035N04/DHD035N04 DHF035N04 Drian-to-Source Voltage VDSS 40 V Gate-to-Source Voltage VGSS ±20 V Drain ...
905. 30A 60V N-Channel Enhancement Mode Power Mosfet DHD30n06 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHB30N06/DHD30N06 Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 30 A (T=100ºC) 20 A Drain ...
906. 12A 600V N-Channel Enhancement Mode Power Mosfet F12n60 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 12N60/I12N60/ E12N60 F12N60 Maximum Drian-Source DC Voltage VDS 600 V Maximum Gate-Drain Voltage VGS ±30 V Drain ...
907. 90A 200V N-Channel Enhancement Mode Power Mosfet Dh100n20d to-3pn [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH100N20D/DH100N20B Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 90 A (T=100ºC) 63 A Drain ...
908. 4A 600V N-Channel Enhancement Mode Power Mosfet F4n60 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 4N60/I4N60/E4N60/B4N60/D4N60 F4N60 Drian-Source Voltage VDS 600 V Gate-Drain Voltage VGS ±30 V Drain ...
909. 50A 200V N-Channel Enhancement Mode Power Mosfet Dhf50n20 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHF50N20 Drian-to-Source Voltage VDSS 200 V Gate-to-Source Voltage VGSS ±25 V Drain Current(continuous) ID(T=25ºC) 50 A (T=100ºC) 35 A Drain ...
910. 500V 5A N-Channel Enhancement Mode Power Mosfet F5n50 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 5N50/I5N50/E5N50 /B5N50/D5N50 F5N50 Drian-Source Voltage VDSS 500 V Gate-to-Source Voltage VGSS ±30 V Drain ...
911. 7A 650V N-Channel Super Junction Power Mosfet Dhfsj7n65 to-220f [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DHSJ7N65/DHISJ7N65/DHESJ7N65/DHBSJ7N65/DHDSJ7N65 DHFSJ7N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Source Voltage VGSS ±30 V Drain ...
912. 8A 700V N-Channel Enhancement Mode Power Mosfet Dhf8n70 to-220 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 8N70/I8N70/E8N70 DHF8N70 Drian-to-Source Voltage VDSS 700 V Gate-to-Source Voltage VGSS ±30 V Drain ...
913. 50A 40V N-Channel Enhancement Mode Power Mosfet D50n04 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT 50N04/50N04/E50N04/B50N04/D50N04 F50N04 Maximum Drian-Source DC Voltage VDS 40 V Maximum Gate-Drain Voltage VGS ±20 V Drain ...
914. 50A 650V Trenchstop Insulated Gate Bipolar Transistor IGBT G50t65lbbw [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL RATING UNIT Collector-Emitter Voltage VCES 650 V Gate- Emitter Voltage VGES ±20 V Collector Current IC(T=25ºC) 100 A Collector Current (Tc=100ºC) 50 A Pulsed ...
915. 85A 30V P-Channel Enhancement Mode Power Mosfet DHD85p03 to-252 [Jun 24, 2024]
[Jun 24, 2024] PARAMETER SYMBOL VALUE UNIT DH85P03/DHI85P03/DHE85P03/DHB85P03/DHD85P03 DHF85P03 Drian-to-Source Voltage VDSS -30 V Gate-to-Source Voltage VGSS ±25 V Drain ...
