Jiangsu Profile
Product List
1276. Hot Sale 20A 650V N-Channel Enhancement Mode Power Mosfet 20n65 to-220c 
[Jul 02, 2025]
[Jul 02, 2025] PARAMETER SYMBOL VALUE UNIT 20N65 Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±30 V Drain Current(continuous) ID(T=25ºC) 20 0A (T=100ºC) 14 A Drain ...
1277. Hot Sale 238A 60V N-Channel Enhancement Mode Power Mosfet Dh026n06 [Jun 23, 2025]
[Jun 23, 2025] Parameter SYMBOL VALUE UNIT Drian-to-Source Voltage BVDSS 60 V Gate-to-Source Voltage VGSS ±20 V Continuous Drain Current ID(TC=25ºC) 238 A ID(TC=100ºC) 167 A Pulsed Drain Current ...
1278. 100V/1.7mΩ /240A N-Mosfet Dse022n10n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 364 A (T=100ºC) 240 A Drain ...
1279. Hot Sale 145A 60V N-Channel Enhancement Mode Power Mosfet Dh045n06 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT DH045N06 DH045N06I/DH045N06E DH045N06B/DH045N06D DH045N0 6F Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain ...
1280. 40V/0.85mΩ /200A N-Mosfet Dse012n04na to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 400 A (T=100ºC) 200 A Drain ...
1281. 130A 85V N-Channel Enhancement Mode Power Mosfet Dh050n85e to-263 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 85 - 85 V ID (T=25ºC) - - 100 A BVGSS ±20 V VTH 2 4 V EAS - - 1156 mJ Ptot - - 300 W Rdson - 5 6 mΩ Features Fast ...
1282. 100V/5.5mΩ /100A N-Mosfet Dsd065n10L3a to-252 [Jun 23, 2025]
[Jun 23, 2025] SYMBOL VALUE UNIT Min Typ. Max BVDSS 100 - 100 V ID (T=25ºC) - - 100 A BVGSS ±20 V EAS - - 306 mJ Ptot - - 115 W Rdson - - 5.5 mΩ Features AEC-Q101 ...
1283. 4.8A 650V N-Channel Super Junction Power Mosfet Dhbsj5n65 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 650 V Gate-to-Drian Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 4.8 A (T=100ºC) 3.0 A Drain ...
1284. 135V 180A N-Channel Enhancement Mode Power Mosfet Dse043n14n to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 135 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 180 A (T=100ºC) 127 A Drain ...
1285. 85V/2.9mΩ /215A N-Mosfet Dh025n08 to-220c [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 85 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 215 A (T=100ºC) 136 A Drain ...
1286. 100V/12mΩ /60A N-Mosfet Dsb150n10L3 to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 60 A (T=100ºC) 38 A Drain ...
1287. High Voltage Mosfet Dje660n80e to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Maximum Drian-Source DC Voltage VDS 800 V Maximum Gate-Drain Voltage VGS ±20 V Drain Current(continuous) ID(T=25ºC) 8 A (T=100ºC) 5.1 A Drain ...
1288. 120A 60V N-Channel Enhancement Mode Power Mosfet Dhs025n06b to-251b [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 170 A (T=100ºC) 107 A Drain ...
1289. 150V/7.5mΩ /115A N-Mosfet Dse090n15n3a to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 150 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) (Tc=25ºC) 115 A (Tc=100ºC) 81 A Drain ...
1290. 120V/12mΩ /70A N-Mosfet Dse140n12n3 to-263 [Jun 23, 2025]
[Jun 23, 2025] PARAMETER SYMBOL VALUE UNIT Drian-to-Source Voltage VDSS 120 V Gate-to-Source Voltage VGSS ±20 V Drain Current(continuous) ID(T=25ºC) 70 A (T=100ºC) 44 A Drain ...
