Jiangsu Profile
Product List
3316. ATEX Certified Chlorine Dioxide Sensor 4-20mA Output for Industial Coal Mine Monit 
[Oct 21, 2026]
[Oct 21, 2026] Product specifications Detection gas Combustible gas Toxic gas Common gas types LPG, Natural, Methane(CH4), Butane, Ethane, Propane, Ethanol, Isobutane, Nbutane, etc. H2S, CO, O2, NH3, H2, HCL, CO2, CL2, SO2, O3, C2H4, ...
3317. Wall Mounted Nh3 Gas Detector Leak Detection for Industrial Cold Storage Use [Oct 21, 2026]
[Oct 21, 2026] Product specifications Detection gas Combustible gas Toxic gas Common gas types LPG, Natural, Methane(CH4), Butane, Ethane, Propane, Ethanol, Isobutane, Nbutane, etc. H2S, CO, O2, NH3, H2, HCL, CO2, CL2, SO2, O3, C2H4, ...
3318. High Purity 5n Hexachlorodisilane Hcds Semiconductor Ald CVD Lpcvd Precursor Si2cl6 [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3319. High Purity 5n Hexachlorodisilane Hcds Semiconductor Precursor for Ald CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3320. Semiconductor Grade Hexachlorodisilane Si2Cl6 for Atomic Layer Deposition and CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3321. HCDS for CVD LPCVD ALD 5N 99 999% Hexachlorodisilane Semiconductor Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3322. Hcds Ald Precursor Hexachlorodisilane CAS 13465-77-5 for Semiconductor Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3323. Semiconductor Precursor HCDS 5N Hexachlorodisilane Si2Cl6 for ALD CVD LPCVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3324. High Purity HCDS 5N Hexachlorodisilane Semiconductor Precursor for ALD and CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3325. Semiconductor Grade Hexachlorodisilane Hcds 5n for Ald CVD Applications [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3326. High Purity Hexachlorodisilane Hcds 99 999% Precursor for Semiconductor Deposition Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3327. High Purity 99 999% Hexachlorodisilane Semiconductor Precursor for Ald Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3328. Hexachlorodisilane Si2cl6 99 999% Hcds Precursor for Ald and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3329. High Purity 5n 99.999% Hexachlorodisilane Hcds Semiconductor Precursor Chemical [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3330. Semiconductor ALD CVD Precursor Hexachlorodisilane HCDS CAS 13465-77-5 [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
