Jiangsu Profile
Product List
3331. Semiconductor Grade HCDS Hexachlorodisilane for Atomic Layer Deposition Processes 
[Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3332. Hexachlorodisilane Hcds 5n Precursor for Ald CVD and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3333. Hexachlorodisilane Supplier HCDS Precursor for Semiconductor ALD and CVD Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3334. High Purity Hexachlorodisilane HCDS for Semiconductor ALD CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3335. Semiconductor Grade Hcds 5n Hexachlorodisilane 99 999% Ald CVD Lpcvd Precursor Si2cl6 [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3336. Hexachlorodisilane Supplier 5n Hcds Semiconductor Precursor for Ald and Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3337. High Purity Semiconductor Grade Hexachlorodisilane Hcds for Ald CVD Deposition [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3338. High Purity Si2cl6 Hexachlorodisilane 5n Hcds Semiconductor Ald CVD Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3339. Semiconductor Precursor Hcds 99 999% Hexachlorodisilane for Ald CVD Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3340. Hexachlorodisilane Si2cl6 5n 99 999% High Purity Semiconductor Precursor Ald CVD Lpcvd [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3341. High Purity Si2cl6 Hexachlorodisilane for Semiconductor Ald Precursor Applications [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3342. HCDS 99 999% Hexachlorodisilane 5N Semiconductor Precursor for ALD CVD LPCVD Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3343. 5n Semiconductor Grade Hcds Hexachlorodisilane for Deposition Processes [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3344. High Purity 5n 99.999% Hexachlorodisilane Hcds Semiconductor Precursor [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
3345. 99 999% Hexachlorodisilane Si2cl6 Semiconductor Grade Hcds Precursor for Ald and CVD [Oct 29, 2026]
[Oct 29, 2026] Product Description Parameter Typical Value Parameter Reference Maximum Limit Total Metal Impurities ≤50 ppb Chromium (Cr) ≤5 ppb Iron (Fe) ≤5 ppb Nickel (Ni) ≤5 ppb Aluminum (Al) ≤5 ppb Zinc (Zn) ≤10 ppb Copper (Cu) ≤2 ...
